Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Henini, M.

doi:10.1007/s11671-006-9017-5

Cited by 36 publications

(22 citation statements)

References 70 publications

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“…Finally, the noted capability for synchronization enables high-resolution measurement of optically induced sample perturbations with POWER NMR. We have used this method to image the distributions of spin density and electric field from single-electronic states, 9 and anticipate broader applications to probe electronic features relevant to samples of interest in fields from quantumconfined solid-state physics [16][17][18] to spintronics applications. 19 …”

Section: Introductionmentioning

confidence: 99%

An optical NMR spectrometer for Larmor-beat detection and high-resolution POWER NMR

Kempf

Marohn

Carson

et al. 2008

Review of Scientific Instruments

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Optical nuclear magnetic resonance ͑ONMR͒ is a powerful probe of electronic properties in III-V semiconductors. Larmor-beat detection ͑LBD͒ is a sensitivity optimized, time-domain NMR version of optical detection based on the Hanle effect. Combining LBD ONMR with the line-narrowing method of POWER ͑perturbations observed with enhanced resolution͒ NMR further enables atomically detailed views of local electronic features in III-Vs. POWER NMR spectra display the distribution of resonance shifts or line splittings introduced by a perturbation, such as optical excitation or application of an electric field, that is synchronized with a NMR multiple-pulse time-suspension sequence. Meanwhile, ONMR provides the requisite sensitivity and spatial selectivity to isolate local signals within macroscopic samples. Optical NMR, LBD, and the POWER method each introduce unique demands on instrumentation. Here, we detail the design and implementation of our system, including cryogenic, optical, and radio-frequency components. The result is a flexible, low-cost system with important applications in semiconductor electronics and spin physics. We also demonstrate the performance of our systems with high-resolution ONMR spectra of an epitaxial AlGaAs/ GaAs heterojunction. NMR linewidths down to 4.1 Hz full width at half maximum were obtained, a 10 3 -fold resolution enhancement relative any previous optically detected NMR experiment.

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Section: Introductionmentioning

confidence: 99%

An optical NMR spectrometer for Larmor-beat detection and high-resolution POWER NMR

Kempf

Marohn

Carson

et al. 2008

Review of Scientific Instruments

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“…Since then, the InAs/GaAs material system remains the most studied, but self-assembled semiconductor QDs are not limited to just this system [3]. Progress in the growth and control of QDs has led to devices and applications ranging from 1.3 mm emission and longer to high-efficiency QD lasers [4][5][6][7][8][9][10][11]. The room-temperature QD emission at a wavelength of 1.1 mm (1.127 eV) is well established using the InAs QDs in a GaAs matrix, while the 1.3 mm (0.954 eV) wavelength and beyond are very difficult in a GaAs matrix without changing the QD material or placing the QDs in a well [12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Improving size distribution of InAs quantum dots for intersubband devices

Andrews

Klang

Krzyzanowski

et al. 2009

Journal of Crystal Growth

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“…Metallic nanoparticles show extraordinary catalytic properties 2 , which are exploited in the synthesis of new materials and drug delivery 3 . Semiconductor nanostructures such as quantum well, quantum wire, and quantum dots have potential applications in various fields of nanoelectronics, photonics, photovoltaic, biomedicine, and biotechnology [4][5][6][7] . In semiconductor nanostructures, carriers are confined either in one-two-or all the three directions, and thus resulting in 2-, 1-, or 0-SHORT COMMUNICATION dimensional electron gas system, respectively.…”

Section: Introcuctionmentioning

confidence: 99%

Low-pressure Chemical Vapour Deposition of Silicon Nanoparticles:Synthesis and Characterisation

Kumar¹,

Agarwal²,

Kumar³

et al. 2008

DSJ

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Semiconductor nanostructures such as quantum wells, quantum wires or quantum dots exhibit superior properties in comparison to their bulk forms. Quantum dots are described as zero-dimensional electron gas system, as carriers are confined in all the three directions. Density of states is discrete function of energy. Allowed energy spectrum is discrete like in an atom. Energy band gap is broadened due to carriers confinement. Semiconductor quantum dots exhibit typical coulomb blockade characteristic which is exploited for development of new generation of nanoelectronic devices namely single-electron transistor, memories, etc, whose operation depends on quantum mechanical tunneling of carriers through energy barriers. These semiconductor nanostructures emit light in visible range upon excitation by optical means. In recent years, research has been focused on different nano-scale materials; metals (Au, Ag, Fe, Mn, Ni), metal oxides (SnO 2 , ZnO 2 ), compound semiconductors (GaAs, GaAlAs, CdSe, CdS, GaN), and elemental semiconductors (silicon and germanium). As silicon is the most favoured material in the established integrated circuits manufacturing technology, research is being done for controlled synthesis and characterisation of Si nanoparticles. The Si nanoparticles have been synthesised on oxide and nitride layers over Si substrate by IC technology compatible low-pressure chemical vapour deposition technique. Atomic force microscopy (AFM) characterisation has been extensively carried out on the samples. It is shown that the tip radius and shape of tip lead to less accurate estimate of the actual size. The AFM images have been evaluated based on the real surface topography and shape of the tip. Photoluminescence (PL) studies have been performed to characterise the samples. The PL measurements showed visible light emission from synthesised silicon nanoparticles.

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Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

Cited by 36 publications

References 70 publications

An optical NMR spectrometer for Larmor-beat detection and high-resolution POWER NMR

An optical NMR spectrometer for Larmor-beat detection and high-resolution POWER NMR

Improving size distribution of InAs quantum dots for intersubband devices

Low-pressure Chemical Vapour Deposition of Silicon Nanoparticles:Synthesis and Characterisation

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