Metal‐organic frameworks (MOFs) have recently emerged as attractive materials for their tunable properties, which have been utilized for diverse applications including sensors, gas storage, and drug delivery. However, the high porosity and poor electrical conductivity of MOFs restrict their optoelectronic applications. Owing to the inherent tunability, a broadband photon absorbing MOF can be designed. Combining the superior properties of the MOFs along with ultrahigh carrier mobility of graphene, for the first time, this study reports a highly sensitive, broadband, and wearable photodetector on a polydimethylsiloxane substrate. The external quantum efficiency of the hybrid photodetector is found to be >5 × 108%, which exceeds all the reported values of similar devices. The porosity of the MOF and ripple structure graphene can assist the trapping of photons at the light‐harvesting layer. The device photoresponsivity is found to be >106 A W−1 with a response time of <150 ms, which is approximately ten times faster than the current standards of the graphene‐organic hybrid photodetectors. In addition, utilizing the excellent flexibility of the graphene layer the wearability of the devices with stretchability up to 100% is demonstrated. The unique discovery of MOF‐based high‐performance photodetectors opens up a new avenue in organic–inorganic hybrid optoelectronics.
Numerous investigations of photon upconversion in lanthanide-doped upconversion nanoparticles (UCNPs) have led to its application in the fields of bioimaging, biodetection, cancer therapy, displays, and energy conversion. Herein, we demonstrate a new approach toward lanthanidedoped UCNPs and a graphene hybrid planar and rippled structure photodetector. The multi-energy sublevels from the 4f n electronic configuration of lanthanides results in longer excited state lifetime for photogenerated charge carriers. This opens up a new regime for ultra-high-sensitivity and broadband photodetection. Under 808 nm infrared light illumination, the planar hybrid photodetector shows a photoresponsivity of 190 AW −1 , which is higher than the currently reported responsivities of the same class of devices. Also, the rippled graphene and UCNPs hybrid photodetector on a poly(dimethylsiloxane) substrate exhibits an excellent stretchability, wearability, and durability with high photoresponsivity. This design makes a significant contribution to the ongoing research in the field of wearable and stretchable optoelectronic devices.
Multistate logic is recognized as a promising approach to increase the device density of microelectronics, but current approaches are offset by limited performance and large circuit complexity. We here demonstrate a route toward increased integration density that is enabled by a mechanically tunable device concept. Bi-anti-ambipolar transistors (bi-AATs) exhibit two distinct peaks in their transconductance and can be realized by a single 2D-material heterojunction-based solid-state device. Dynamic deformation of the device reveals the co-occurrence of two conduction pathways to be the origin of this previously unobserved behavior. Initially, carrier conduction proceeds through the junction edge, but illumination and application of strain can increase the recombination rate in the junction sufficiently to support an alternative carrier conduction path through the junction area. Optical characterization reveals a tunable emission pattern and increased optoelectronic responsivity that corroborates our model. Strain control permits the optimization of the conduction efficiency through both pathways and can be employed in quaternary inverters for future multilogic applications.
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