The need to overcome the shortcomings of conventional tunnel field-effect transistor (TFET) has driven many to come up with advanced TFET innovations. This Letter presents a comparative analysis of new techniques to enhance DC/radio-frequency (RF) performance of dopingless TFETs. In this regard, two advanced structures have been compared along with conventional electrically doped TFET. The deviceselectrically doped TFET, low work-function strip electrically doped TFET and low work-function live strip electrically doped TFET are investigated in terms of DC, RF and linearity. This Letter focuses on electrical doping on dopingless substrate to reduce random dopant fluctuations and fabrication complications. The comparative analysis illustrates the importance of low work-function live strip (LWLS) over low work-function strip (LWS). In addition, an optimisation of length and position of LWS and LWLS is also investigated for providing fabrication ease.
Rapid tunnelling junction formation is a much crucial issue with conventional sub-nanometre tunnel field-effect transistor (TFET) to obtain improved electrostatics characteristics. This task becomes more problematic and complicated for dopingless TFET as a result of wide tunnelling barrier at channel/source junction. In this regard, a new approach has been employed by implanting the metal angle (MA) inside the dielectric layer near channel/source joint to obtain enhanced electrical behaviour of the proposed structure. Employment of MA of small work-function increases electron density at channel/source interface to have improved electron tunnelling rate. Work-function optimisation of MA on RF/DC parameters is analysed in device optimisation part of this work. Simultaneously length optimisation of MA is also presented in the device optimisation section to ease the complex fabrication steps. In addition to these, circuit level performance of proposed and conventional structures is also analysed in this study.
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