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The fabrication complexity and cost effectiveness in nanoscale regime have been one of the major issues in the modern biosensor. Therefore, to overcome such issue, this study investigates a junctionless dielectrically modulated electrically doped tunnel field effect transistor (FET) as a biosensor for application of label free detection. In this work, the authors have been considered the n + heavily doped silicon layer and two isolate gates for the formation of intrinsic and p + source regions underneath the control gate (CG) and polarity gate (PG) with appropriate work functions and polarity bias over silicon body which are similar to that of conventional tunnel FET. The proposed device structure is immune against doping control issues, avoids thermal budget, and fabrication issues. Moreover, the formation of nanogap cavity embedded within the CG dielectric is performed by etching of CG dielectric region towards the PG side for the purpose of sensing the biomolecules. The sensing ability of the proposed device has been evaluated in terms of varying the dielectric constant and charge density of the biomolecules. However, transfer characteristics are also evaluated with the variation in thickness and length of the cavity. All the simulations have been performed using ATLAS technology computer aided design device simulator.

This work reports a dual metal bipolar gate-based electrically doped tunnel field-effect transistor (DMBG-ED-TFET) which overcomes the ambipolarity issue and gives improved radio frequency (RF) and linearity metrics. The formations of n + , p + drain and source regions in this device is performed by applying polarity biases at polarity gate (PG)-1 and PG-2 with 1.2 and −1.2 V. In DMBG-ED-TFET, the gate is alienated into three subdivisions and each subdivision named as tunnel gate (M1), BG (M2) and auxiliary gate (M3) with their respective work functions as f M1 , f M2 and f M3 , respectively. Finally, some existent applications were applied on a proposed device with different possible combinations (work function). Those different possible combinations of work function, the proposed device (DMBG-ED-TFET) gives superior results with f M1 = f M3 , f M2 , where f M1 is near to source region because to increase the I on current and f M3 is located near the drain region to overwhelm the ambipolarity. Additionally, the application of work function engineering on the proposed device results in improving the DC characteristics along with analogue/RF and linearity figure of merits (VIP3, IIP3 and IMD3) also discussed.

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