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Climate variability mainly the annual air temperature and precipitation have received great attention worldwide. The magnitude of these climate variability changes with the variation in locations. Rajasthan comes under the arid and semi-arid zone of India in which monsoon is a principal element of water resource. Due to erratic and scanty rainfall in this zone, agriculture is totally dependent on the monsoon. The objective of the present study is to assess the meteorological drought characteristics using Drought Indices Calculator DrinC from the historical rainfall records of the Barmer district of Rajasthan state by employing the criterion of percentage departure (D%), rainfall Anomaly index (RAI) and standardized precipitation index (SPI). Trend analysis of seasonal and extreme annual monthly rainfall was carried out for the Barmer district of Rajasthan state using the data period between 1900 and 2002 at the 5% level of significance. Sen's slope estimator was also applied to identify the trend. Temporal analysis is useful to predict and identify the possible drought severity and its duration in the study region. It also helps to understand its effect on ground water recharge and increasing the risk of water shortage. Trend analysis of rainfall over 102 years shows an increasing trend in pre-monsoon, post monsoon, southwest monsoon and annual rainfall and decreasing trend in winter rainfall. Through this study, policy makers and local administrators will be benefitted which will help them in taking proactive drought relief decision in the drought-hit regions.

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The need to overcome the shortcomings of conventional tunnel field-effect transistor (TFET) has driven many to come up with advanced TFET innovations. This Letter presents a comparative analysis of new techniques to enhance DC/radio-frequency (RF) performance of dopingless TFETs. In this regard, two advanced structures have been compared along with conventional electrically doped TFET. The deviceselectrically doped TFET, low work-function strip electrically doped TFET and low work-function live strip electrically doped TFET are investigated in terms of DC, RF and linearity. This Letter focuses on electrical doping on dopingless substrate to reduce random dopant fluctuations and fabrication complications. The comparative analysis illustrates the importance of low work-function live strip (LWLS) over low work-function strip (LWS). In addition, an optimisation of length and position of LWS and LWLS is also investigated for providing fabrication ease.

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