Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor

Verma, Madhulika; Tirkey, Sukeshni; Yadav, Shivendra; Sharma, Dheeraj; Yadav, Dharmendra Singh

doi:10.1109/ted.2017.2732820

Cited by 153 publications

(64 citation statements)

References 30 publications

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“…In Figure 9 a,b, we show the comparison of the DM-LTFET metrics with previously published papers. It can be clearly seen from Figure 9 a that, compared with previously published papers [ 16 , 17 , 18 , 20 , 26 ] (which have double gates), the DM-LTFET could simultaneously have a larger on-state current and I on / I off sensitivity. At the same time, it can be obviously seen from Figure 9 b that the current sensitivity and sub-threshold swing sensitivity of the proposed structure were higher than those of the past published papers [ 16 , 18 , 19 , 20 ].…”

Section: Resultsmentioning

confidence: 76%

“…Due to its low cost and easy operation, dielectric modulation is applied in biosensors [ 11 , 12 , 13 , 14 ]. Therefore, sensors made using dielectric modulation based on a TFET have been studied by many scholars [ 15 , 16 , 17 , 18 ]. In 2016, Kanungo et al studied the influence of silicon germanium (SiGe) sources and n+-pocket-doped channels on dielectric modulation sensors.…”

Section: Introductionmentioning

confidence: 99%

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Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

et al. 2020

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Label-free biomolecular sensors have been widely studied due to their simple operation. L-shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low subthreshold swing, off-state current, and power consumption. In a dielectric-modulated LTFET (DM-LTFET), a cavity is trenched under the gate electrode in the vertical direction and filled with biomolecules to realize the function of the sensor. A 2D simulator was utilized to study the sensitivity of a DM-LTFET sensor. The simulation results show that the current sensitivity of the proposed structure could be as high as 2321, the threshold voltage sensitivity could reach 0.4, and the subthreshold swing sensitivity could reach 0.7. This shows that the DM-LTFET sensor is suitable for a high-sensitivity, low-power-consumption sensor field.

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Section: Resultsmentioning

confidence: 76%

Section: Introductionmentioning

confidence: 99%

Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

et al. 2020

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“…In the literature, the different techniques are explored to improve the sensing capability and sensing speed by the researchers such as nanogap cavity is created at the source side in conventional DG-TFET biosensor [10,[13][14][15][16] which modulate the coupling between gate electrode and channel regions and senses the biomolecule. The cavity created at the drain side which changes the ambipolar conduction and sense the biomolecule in the cavity region [17], short-gate full-gate TFET-based biosensor [18] where the short-gate device has higher sensitivity due to better coupling between the gate and channel regions.…”

Section: Introductionmentioning

confidence: 99%

“…To improve the performance of biosensor, a heavily doped n +‐pocket and gate‐to‐source overlap is used in vertical tunnelling‐based TFET biosensor [18], where lateral and vertical tunnelling phenomena are used to improve sensitivity. Still, the TFET‐based biosensors suffer from low sensitivity and sensing speed, because of the restricted design of cavity and abruptness at the source–channel junction.…”

Section: Introductionmentioning

confidence: 99%

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Approach for the improvement of sensitivity and sensing speed of TFET‐based biosensor by using plasma formation concept

Soni

Sharma

Aslam

et al. 2018

Micro & Nano Letters

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In this work, a new design of dual-gate source electrode (SE) dielectric-modulated tunnel field-effect transistor (TFET) biosensor with improved sensitivity and sensing speed has been presented. For this, P + (source) I (channel) N + (drain) type conventional TFETs structure is initially considered for comparison. Further to this, for the first time, an additional electrode is placed over the physically doped source region of the conventional biosensor with the negative supply voltage for extension of the cavity over the source region. The use of extra SE with negative supply voltage for the formation of cavity over the source region overcome the issues related to the formation of abrupt junction (at source/channel junction) and solubility limit of silicon material by the formation of a plasma layer of holes near to Si/HfO 2 interface in the source region. Moreover, the presence of extra biomolecules in the source cavity region of the proposed device further increases the concentration of plasma layer of holes near to Si/HfO 2 due to better coupling of SE and source region which is responsible for the improvement in sensing capability and sensing the speed of TFET biosensor. In this concern, a comparative investigation has been performed.

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Operation Principle and Fabrication of TFET

Yirak,

Chaujar

2023

Advanced Ultra Low‐Power Semiconductor Devices

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Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor

Cited by 153 publications

References 30 publications

Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

Sensitivity Analysis of Biosensors Based on a Dielectric-Modulated L-Shaped Gate Field-Effect Transistor

Approach for the improvement of sensitivity and sensing speed of TFET‐based biosensor by using plasma formation concept

Operation Principle and Fabrication of TFET

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