The need to overcome the shortcomings of conventional tunnel field-effect transistor (TFET) has driven many to come up with advanced TFET innovations. This Letter presents a comparative analysis of new techniques to enhance DC/radio-frequency (RF) performance of dopingless TFETs. In this regard, two advanced structures have been compared along with conventional electrically doped TFET. The deviceselectrically doped TFET, low work-function strip electrically doped TFET and low work-function live strip electrically doped TFET are investigated in terms of DC, RF and linearity. This Letter focuses on electrical doping on dopingless substrate to reduce random dopant fluctuations and fabrication complications. The comparative analysis illustrates the importance of low work-function live strip (LWLS) over low work-function strip (LWS). In addition, an optimisation of length and position of LWS and LWLS is also investigated for providing fabrication ease.
Tunnel field effect transistors (TFETs) have been extensively explored for the possibility of replacing metal oxide semiconductor FET (MOSFET) due to its steeper slope and for being more energy efficient. In this regard, device level performance of AlGaSb/GaAsP gate all around (Nanowire) charge plasma TFET (CP-TFET) shows promising results. To further verify these results, an overview of circuit performance is provided in this work, where analysis of two-stage operational amplifier (op-amp) is shown. Further, based on this op-amp, working of the integrator is also demonstrated. Simulations are carried out with the aid of Verilog A model in the Cadence environment. The outcome of circuit performance exhibits that the proposed device is viable for analogue applications and can be seriously considered for future low-power analogue designs.
In this work, a fast and low‐power sigma delta )(∑normalΔ analogue‐to‐digital converter (ADC) has been developed using a hetero‐material electrically‐doped nano‐wire tunnel field effect transistor (HM‐ED‐NW‐TFET) for the first time. The better gate controllability of nano‐wire and immunity against process variations of electrically doped tunnel field effect transistor (TFET) enhances resolution. In this regard, the first step that has been performed is the material engineering using normalAlxnormalGa1−xnormalSb/normalGaAs1−yPy, to achieve significant driving current at low subthreshold swing and high InormalON/InormalOFF ratio. Secondly, the mole fraction is optimised to upgrade the critical analogue component – the op‐amp. Also, drain under lapping is included in p‐TFET to bring its characteristics as close to n‐TFET. Latter, the look‐up tables of the proposed device has been generated which is used to develop individual block of ∑normalΔ ADC in Cadence. The blocks are well verified and integrated into final ∑normalΔ ADC and its performance is evaluated. Hence, this work has explored the inherent merits of HM‐ED‐NW‐TFET in the development of low power and fast ∑normalΔ ADC by virtue of a high slew rate op‐amp. Therefore, this work contributes a novel approach to explore the characteristics of emerging devices in mixed signal applications.
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