Performance improvement of doped TFET by using plasma formation concept

Soni, Deepak; Sharma, Dheeraj; Yadav, Shivendra; Aslam, Mohd.; Sharma, Neeraj

doi:10.1016/j.spmi.2017.10.012

Cited by 24 publications

(11 citation statements)

References 26 publications

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“…For both the devices, the design parameters considered are shown in Table 1. Simulation has been performed using Silvaco Atlas simulator, for this non‐local BTBT model and bandgap narrowing (BGN) model is considered for the calculation of the tunnelling rate of charge carriers [19, 24, 25] in the simulation. Shockley–Read–Hall recombination and Auger recombination is activated by SRH and AUGER parameter, respectively [25, 26].…”

Section: Device Structure and Simulation Setupmentioning

confidence: 99%

“…The negative voltage over source region induces the holes at the surface of the Si/HfO 2 interface, creates a plasma layer of the hole at the silicon/HfO 2 interface and overcomes the limitation of solubility. Holes layer at the interface in the source region creates abruptness at the source-channel junction, increases the drain current [19]. Further, the cavity in the proposed structure is extended from the gate dielectric region to source dielectric region.…”

Section: Introductionmentioning

confidence: 99%

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Approach for the improvement of sensitivity and sensing speed of TFET‐based biosensor by using plasma formation concept

Soni

Sharma

Aslam

et al. 2018

Micro & Nano Letters

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In this work, a new design of dual-gate source electrode (SE) dielectric-modulated tunnel field-effect transistor (TFET) biosensor with improved sensitivity and sensing speed has been presented. For this, P + (source) I (channel) N + (drain) type conventional TFETs structure is initially considered for comparison. Further to this, for the first time, an additional electrode is placed over the physically doped source region of the conventional biosensor with the negative supply voltage for extension of the cavity over the source region. The use of extra SE with negative supply voltage for the formation of cavity over the source region overcome the issues related to the formation of abrupt junction (at source/channel junction) and solubility limit of silicon material by the formation of a plasma layer of holes near to Si/HfO 2 interface in the source region. Moreover, the presence of extra biomolecules in the source cavity region of the proposed device further increases the concentration of plasma layer of holes near to Si/HfO 2 due to better coupling of SE and source region which is responsible for the improvement in sensing capability and sensing the speed of TFET biosensor. In this concern, a comparative investigation has been performed.

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Section: Device Structure and Simulation Setupmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Approach for the improvement of sensitivity and sensing speed of TFET‐based biosensor by using plasma formation concept

Soni

Sharma

Aslam

et al. 2018

Micro & Nano Letters

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show abstract

“…Researchers have commonly used FET-based biosensors for their ability of label-free detection, CMOS compatibility, cost-effectiveness, and miniaturization [ 5 – 7 ]. But the downside of these FET-based biosensors is short channel effects (SCEs) and large subthreshold swings (SS> 60 mV/decade) [ 8 – 10 ].…”

Section: Introductionmentioning

confidence: 99%

Electrically doped SiGe-heterojunction TFET based biosensor considering non-ideal hybridization issues: a simulation study

2021

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Calibrated simulations are used to study a dielectric modulated, electrically doped, dual metal gate, SiGe heterojunction, double gate TFET biosensor in this work. Use of lower bandgap SiGe at the source side helps in improving the ON current of the biosensor. Electric doping is preferred over physical doping to overcome the random dopant fluctuations and high thermal budget problems. Non-ideal situations having partially and non-uniformly filled cavity regions are analyzed in this work. Partially filled cavity has fill factor less than 100% and is studied by considering 50%, 20%, and 10% fill factors. Different positions of biomolecules inside a partially filled cavity are also studied through extensive simulations and are found to affect the sensitivity largely. Four different non-uniform profiles, decreasing, increasing, convex and concave, are created in the cavity region and their sensitivity values are compared for different dielectric constants ( k ) and charge densities ( ). Among the different non-uniform profiles considered, maximum sensitivity is obtained for decreasing profile and it improves with an increase in dielectric constant and positive charge density while it decreases when negative charge density increases.

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“…Various structural and material‐based solutions have been proposed to boost the ON state performance of TFETs 5‐11 . The charge plasma‐based structure has also been reported to improve the performance of TFET device 12 in which the source and drain are not doped, instead the charge concentration is induced through metal, when metal is brought in contact with semiconductor contacts, provided some conditions on work function and film thickness are satisfied 13,14 . GeSn‐based homojunction and heterojunction TFET have also been reported to improve the ON current of TFET 15‐17 .…”

Section: Introductionmentioning

confidence: 99%

Pseudo Split Gate In₀_.₅₃Ga₀_.47As/InP Hetero‐Junction Tunnel FET: Design and Analysis

Haris

Loan

Mainuddin

2020

Int J Numerical Modelling

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In this work, we present the design and simulation of a novel structure of In0.53Ga0.43As/InP based hetero junction tunnel field effect transistor (HTFET). The proposed HTFET employs two gates: the conventional main gate and a pseudo split gate (PSG) at the drain side. The PSG is placed at the top of the drain region with the same equivalent oxide thickness (EOT) and work function as that of the main gate at an optimized separation from gate electrode. The PSG is not an active gate and it is not connected to either VDD or gate voltage. Two dimensional simulation study has revealed that the proposed device suppresses ambipolar current by ~10 orders of magnitude as compared to a HTFET without overlap and by >7 orders as compared to overlapping gate on drain HTFET (OGD‐HTFET). The PSG‐based HTFET (PSG‐HTFET) also exhibits lesser total gate capacitance as compared to OGD TFET. The proposed PSG‐HTFET offers much better ambipolar suppression even at higher drain doping and lower EOT, as compared to OGD‐HTFET. Further, the PSG‐HTFET exhibits 50% and 40% lesser fall and rise propagation delays respectively as compared to the OGD‐HTEFT. Further, the voltage overshoot and undershoot have also been suppressed in the proposed PSG‐HTFET. The scalability analysis shows that the PSG‐HTFET has better scalability in terms of ambipolar suppression, total gate capacitance, and propagation delays.

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Performance improvement of doped TFET by using plasma formation concept

Cited by 24 publications

References 26 publications

Approach for the improvement of sensitivity and sensing speed of TFET‐based biosensor by using plasma formation concept

Approach for the improvement of sensitivity and sensing speed of TFET‐based biosensor by using plasma formation concept

Electrically doped SiGe-heterojunction TFET based biosensor considering non-ideal hybridization issues: a simulation study

Pseudo Split Gate In₀_.₅₃Ga₀_.47As/InP Hetero‐Junction Tunnel FET: Design and Analysis

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Performance improvement of doped TFET by using plasma formation concept

Cited by 24 publications

References 26 publications

Approach for the improvement of sensitivity and sensing speed of TFET‐based biosensor by using plasma formation concept

Approach for the improvement of sensitivity and sensing speed of TFET‐based biosensor by using plasma formation concept

Electrically doped SiGe-heterojunction TFET based biosensor considering non-ideal hybridization issues: a simulation study

Pseudo Split Gate In0.53Ga0.47As/InP Hetero‐Junction Tunnel FET: Design and Analysis

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Pseudo Split Gate In₀_.₅₃Ga₀_.47As/InP Hetero‐Junction Tunnel FET: Design and Analysis