In this research work, nanocrystalline BST (Ba 0.6 Sr 0.4 TiO 3 ) powders were synthesized through a modified sol-gel process, using barium acetate, strontium acetate and titanium isopropoxide as the precursors. In this process, stoichiometric proportions of barium acetate and strontium acetate were dissolved in acetic acid and titanium (IV) isopropoxide was added to form BST gel. The as-formed gel was dried at 200°C and then calcined in the temperature range of 600 to 850°C for crystallization. The samples were characterized by infrared spectroscopy method (FT-IR), X-ray diffraction technique (XRD) and field emission scanning electron microscope (FESEM) and energy dispersive X-ray spectroscopy. EDS analysis of these samples confirmed the formation of the final phase with the special stoichiometry. The formation of a cubic perovskite crystalline phase with nanoscale dimension was detected using the mentioned techniques. The results showed that the obtained crystallite sizes were 33 and 37 nm for BST powder calcined at 750 and 850°C, respectively.

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Lead sulfide (PbS) thin films were prepared onto ultra-clean quartz substrate by the electron beam gun (EBG) evaporation method. The thicknesses of the thin films were 50, 100, 150and 200 nm. Theywere annealed at 423 K for 2 h. Field emission scanning electron microscopy (FESEM) images of the thin films showed their texture morphologyat the surface of the quartz substrate. X-ray diffraction (XRD) patterns of the thin films showed that theyhave a cubic phase and rock-salt structureafter annealing. The average crystallite size for the thin films was in the range of 32-100 nm. Optical measurements confirmed that crystalline thin films have a direct band gap that increases by decreasing the film thickness. This blue shift of the band gap of thin films compared to the bulk structure can be attributed to the quantum confinement effects in the nanoparticles. A decrease in conductivity by increasing the temperature confirmed the positive temperature coefficient of resistance in the thin films that showed the dominant conduction mechanism is via a band-like transition. The density of localized states at the Fermi level increases by increasing the film thickness. Current-voltage behavior of the thin films showed an increase in both dark current and photocurrent by increasing the crystallite size which is discussed, based on the presence of trap states and barriers in nanostructures.

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