Study of the preparation and spectral response of stacked graphene nanoribbon-carbon nanotube-based phototransistors

Salimian, Sedighe; Araghi, Mohammad Esmaeil Azim

doi:10.1016/j.carbon.2016.06.094

Cited by 9 publications

(4 citation statements)

References 48 publications

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“…[2][3][4][5] A variety of methods have been employed to produce graphene materials, however exfoliation by mechanical (ball milling, micromechanical cleavage, sonication) 5 as well as electrochemical treatment [6][7][8] appear to be most oen used. Graphene materials can also be synthesized by other methods, such as chemical or electrochemical reduction of graphene oxide, 2,7 thermal exfoliation of graphite/graphene oxide, [9][10][11] unzipping of carbon nanotubes, 12 chemical vapour deposition, 13 or plasma assisted method. 14 Properties of graphene materials being strongly related to the method used as well as conditions applied, determine its practical application, i.e.…”

Section: Introductionmentioning

confidence: 99%

Graphene material preparation through thermal treatment of graphite oxide electrochemically synthesized in aqueous sulfuric acid

et al. 2017

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Section: Introductionmentioning

confidence: 99%

Graphene material preparation through thermal treatment of graphite oxide electrochemically synthesized in aqueous sulfuric acid

et al. 2017

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“…In addition, since the recombination time in graphene is few picoseconds, very few charge carriers are detected before they recombine. To circumvent this, graphene derivatives with a larger band gap, such as reduced graphene oxide (rGO), graphene quantum dots, and graphene nano ribbons, are being investigated [8,9,10,11,12] for use in photon detectors.…”

Section: Introductionmentioning

confidence: 99%

Development of a Reduced Graphene Oxide-Based X-Ray Detector for Space Applications

et al. 2024

Proceedings of the 9th World Congress on Recent Advances in Nanotechnology

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In this work, a light weight, reduced Graphene Oxide Field Effect Transistor based radiation detector is developed which detects X-rays at room temperature. Graphene Oxide is synthesized from Graphite flakes using modified Hummer's method which is then reduced by Hydroiodic acid fumes followed by low temperature treatment. Material characterization using X-ray diffraction technique and Raman spectra confirmed the reduction of Graphene oxide to reduced graphene oxide. Synthesized reduced graphene oxide is then put in back gate Field Effect Transistor architecture. The electrodes of the Field Effect transistor are made using thin film deposition technique. The detector is housed inside a simple packaging setup. The device showed promising response with Xrays of energy 20-40 KeV at room temperature at various incoming flus of X-ray photons. Response curve of device showed linear response with increasing X-ray energy and current. The device demonstrated a rise time of 0.25 s and fall time of 0.15s

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“…Optoelectronic devices based on carbon nanotubes (CNTs) and graphene nanoribbons (GNRs), namely, GNR/CNT-based cells, carbon-based phototransistors, and carbon-based photodetectors, have attracted significant interest in recent years [ 1 , 2 , 3 , 4 , 5 ]. Indeed, CNT/GNR-based phototransistors have gained keen focus owing to their promising features such as the unique light–CNT/GNR interaction, high photoresponsivity, fast response, high detectivity, high photosensitivity, extensive detection range, and especially, the low noise in comparison to the conventional photodiodes [ 6 , 7 , 8 , 9 , 10 ]. Most of these promising features are attributed to the unique characteristics that the CNTs and GNRs exhibit in terms of the physical, electrical, optical properties and are synergically correlate with their atomistic structures [ 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison

et al. 2022

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In this article, ultrascaled junctionless (JL) field-effect phototransistors based on carbon nanotube/nanoribbons with sub-10 nm photogate lengths were computationally assessed using a rigorous quantum simulation. This latter self-consistently solves the Poisson equation with the mode space (MS) non-equilibrium Green’s function (NEGF) formalism in the ballistic limit. The adopted photosensing principle is based on the light-induced photovoltage, which alters the electrostatics of the carbon-based junctionless nano-phototransistors. The investigations included the photovoltage behavior, the I-V characteristics, the potential profile, the energy-position-resolved electron density, and the photosensitivity. In addition, the subthreshold swing–photosensitivity dependence as a function of change in carbon nanotube (graphene nanoribbon) diameter (width) was thoroughly analyzed while considering the electronic proprieties and the quantum physics in carbon nanotube/nanoribbon-based channels. As a result, the junctionless paradigm substantially boosted the photosensitivity and improved the scaling capability of both carbon phototransistors. Moreover, from the point of view of comparison, it was found that the junctionless graphene nanoribbon field-effect phototransistors exhibited higher photosensitivity and better scaling capability than the junctionless carbon nanotube field-effect phototransistors. The obtained results are promising for modern nano-optoelectronic devices, which are in dire need of high-performance ultra-miniature phototransistors.

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Study of the preparation and spectral response of stacked graphene nanoribbon-carbon nanotube-based phototransistors

Cited by 9 publications

References 48 publications

Graphene material preparation through thermal treatment of graphite oxide electrochemically synthesized in aqueous sulfuric acid

Graphene material preparation through thermal treatment of graphite oxide electrochemically synthesized in aqueous sulfuric acid

Development of a Reduced Graphene Oxide-Based X-Ray Detector for Space Applications

Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison

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