Effect of annealing temperature on optical and electrical properties of lead sulfide thin films

Motlagh, Zeinab Azadi; Araghi, Mohammad Esmaeil Azim

doi:10.1016/j.mssp.2015.07.039

Cited by 24 publications

(12 citation statements)

References 32 publications

(28 reference statements)

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“…1b ), which promote tail states in the band gap onset. However, the obtained results confirm to what has previously been reported in the literature 36 , 65 . From our own experience, PbS Films deposited at 300 °C were crystalline with a band gap of 0.72 eV (not shown here).…”

Section: Resultssupporting

confidence: 92%

“…2a , reveals that it is completely amorphous without any signal from microcrystals (Fig. 1b ), due to presence of just a wide band in the spectrum, which is in agreement with previously published results 36 . After treatment with I 2 gas (Fig.…”

Section: Resultssupporting

confidence: 92%

“…In this work, we propose an alternative approach for producing planar perovskite thin films based on combination of rf-sputtering with the solution process route. PbS thin films with good homogeneity and adherence on bare glass and silicon have been successfully deposited by sputtering 36 . Thus, a new method is proposed to demonstrate that PbS thin films, deposited by rf-sputtering at room temperature, can be used as precursor films for post-conversion into perovskite (CH 3 NH 3 PbI 3 ) thin films with good homogeneity and pinhole-free.…”

Section: Introductionmentioning

confidence: 99%

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Perovskite Thin Film Synthesised from Sputtered Lead Sulphide

Filho

Ермаков

Marques

2018

Sci Rep

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In the last few years, research on dye-sensitised devices has been focused on the development of solar cells, based on CH3NH3PbX3 (X = I−, Br−, Cl−) composites with perovskite structure. The deposition of perovskite thin films is usually carried out by solution-based processes using spin-coating techniques that result in the production of high quality films. Solar cells made by this method exceed 20% efficiency, with the potential for use in large scale production through ink print or screen printing techniques. As an alternative route, perovskite thin films can be deposited through thermal evaporation. A new method is proposed to produce CH3NH3PbI3, based on a radio-frequency (rf) -sputtering technique that results in a high reproducibility of the films and is compatible with roll-to-roll processes. We deposited thin films of lead-sulphide (PbS) and converted them into perovskite by placing the films in an iodine atmosphere, followed by dipping in a solution of methylammonium iodide (CH3NH3I). The conversions to PbI2 and CH3NH3PbI3 were confirmed by elemental analyses, absorption, and photoluminescence spectroscopy. Structural properties were revealed by X-ray diffraction and infrared and Raman spectroscopy.

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Section: Resultssupporting

confidence: 92%

Section: Resultssupporting

confidence: 92%

Section: Introductionmentioning

confidence: 99%

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Perovskite Thin Film Synthesised from Sputtered Lead Sulphide

Filho

Ермаков

Marques

2018

Sci Rep

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“…Optical band gaps are commonly determined from Tauc plots constructed from transmittance data, and for PbS thin films many examples of this approach are present in the literature (Table S3). ,− However, we found optical band gap extraction from Tauc plots to be problematic in the case of PbS. The values extracted from Tauc plots of ∼100 nm thick PbS films deposited at different temperatures were unreasonably large (≥2.5 eV, Figure S10d–f) for the observed grain sizes (Figures S8, S9, and S11).…”

Section: Resultsmentioning

confidence: 91%

Atomic Layer Deposition of PbS Thin Films at Low Temperatures

et al. 2020

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Atomic layer deposition (ALD) is a viable method for depositing functional, passivating, and encapsulating layers on top of halide perovskites. Studies in that area have only focused on metal oxides, despite a great number of materials that can be made with ALD. This work demonstrates that, in addition to oxides, other ALD processes can be compatible with the perovskites. We describe two new ALD processes for lead sulfide. These processes operate at low deposition temperatures (45–155 °C) that have been inaccessible to previous ALD PbS processes. Our processes rely on volatile and reactive lead precursors Pb(dbda) (dbda = rac-N 2,N 3-di-tert-butylbutane-2,3-diamide) and Pb(btsa)2 (btsa = bis(trimethylsilyl)amide) as well as H2S. These precursors produce high quality PbS thin films that are uniform, crystalline, and pure. The films exhibit p-type conductivity and good mobilities of 10–70 cm2 V–1 s–1. Low deposition temperatures enable direct ALD of PbS onto a halide perovskite CH3NH3PbI3 (MAPI) without its decomposition. The stability of MAPI in ambient air is greatly improved by capping with ALD PbS. More generally, these new processes offer valuable alternatives for PbS-based devices, and we hope that this study will inspire more studies on ALD of non-oxides on halide perovskites.

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“…For infrared detection, various materials are extensively used, including Ge, InGaAs, InAs, and lead chalcogenides (PbTe, PbS and PbSe) [ 2 ]. Among these, PbS films are produced by various growth techniques, such as chemical bath deposition (CBD) [ 3 , 4 , 5 , 6 ], sputtering [ 7 ], electrodeposition [ 8 ], spray pyrolysis [ 9 , 10 ], microwave heating [ 11 , 12 ] and spin-cast of colloidal quantum dots [ 13 , 14 ]. Chemical bath deposition (CBD) is an efficient technique for the synthesis of high quality PbS thin films in laboratory conditions [ 15 ] as well as on large industrial scales [ 16 ].…”

Section: Introductionmentioning

confidence: 99%

Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

Ampadu

Kim

2021

Nanomaterials

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We fabricated a lateral photovoltaic device for use as infrared to terahertz (THz) detectors by chemically depositing PbS films on titanium substrates. We discussed the material properties of PbS films grown on glass with varying deposition conditions. PbS was deposited on Ti substrates and by taking advantage of the Ti/PbS Schottky junction, we discussed the photocurrent transients as well as the room temperature spectrum response measured by Fourier transform infrared (FTIR) spectrometer. Our photovoltaic PbS device operates at room temperature for wavelength ranges up to 50 µm, which is in the terahertz region, making the device highly applicable in many fields.

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Effect of annealing temperature on optical and electrical properties of lead sulfide thin films

Cited by 24 publications

References 32 publications

Perovskite Thin Film Synthesised from Sputtered Lead Sulphide

Perovskite Thin Film Synthesised from Sputtered Lead Sulphide

Atomic Layer Deposition of PbS Thin Films at Low Temperatures

Lateral PbS Photovoltaic Devices for High Performance Infrared and Terahertz Photodetectors

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