Perovskite Thin Film Synthesised from Sputtered Lead Sulphide

Abstract

In the last few years, research on dye-sensitised devices has been focused on the development of solar cells, based on CH3NH3PbX3 (X = I−, Br−, Cl−) composites with perovskite structure. The deposition of perovskite thin films is usually carried out by solution-based processes using spin-coating techniques that result in the production of high quality films. Solar cells made by this method exceed 20% efficiency, with the potential for use in large scale production through ink print or screen printing techniques. As an alternative route, perovskite thin films can be deposited through thermal evaporation. A new method is proposed to produce CH3NH3PbI3, based on a radio-frequency (rf) -sputtering technique that results in a high reproducibility of the films and is compatible with roll-to-roll processes. We deposited thin films of lead-sulphide (PbS) and converted them into perovskite by placing the films in an iodine atmosphere, followed by dipping in a solution of methylammonium iodide (CH3NH3I). The conversions to PbI2 and CH3NH3PbI3 were confirmed by elemental analyses, absorption, and photoluminescence spectroscopy. Structural properties were revealed by X-ray diffraction and infrared and Raman spectroscopy.

High performance perovskite sub-module with sputtered SnO2 electron transport layer

“…is convenient to produce all sorts of large area uniform thin films (semiconductor (Aydin et al, 2018;Guo et al, 2018;Silva Filho et al, 2018) and alloy (Huang et al, 2015)) in industry and effective to control the morphology and crystallinity of film via sputter process, and which could be perfectly applied in thin ETL films preparation for large size PSMs.…”

Electron-enriched thione enables strong Pb–S interaction for stabilizing high quality CsPbI3 perovskite films with low-temperature processing

“…S14 †), we can clearly see that the typical Raman bands of PbI 2 (75, 96, 112, and 164 cm À1 ) vanish and new bands at 154 and 205 cm À1 that can be assigned to the Pb-S bond appear for CsPbI 3 with the 4-PT complex. 42,43 The intense and sharp band associated with C-S stretching vibration (721 cm À1 ) in the 4-PT sample becomes extremely weak and red-shis to 715 cm À1 with the addition of CsPbI 3 . 44 These results further conrm that the sulfur atom in 4-PT mainly reacts with perovskite via coordination.…”

Influence of Co-Sputtered Ag:Al Ultra-Thin Layers in Transparent V2O5/Ag:Al/AZO Hole-Selective Electrodes for Silicon Solar Cells

“…In this work the magnetron radiofrequency (RF) sputtering technique was used as a replacement of thermal evaporation to deposit DMDs. RF sputtering is an industrially suitable technique with excellent uniformity on large areas, high adhesion, purity, and high deposition rates [32][33][34]. Moreover, sputtering enables better control over thickness of the metallic layers [35,36] and may eliminate the more complex usage of a seed layer [37].…”