We determined the minority carrier diffusion length to be ∼1 μm in single PbS nanowire field effect transistors by scanning photocurrent microscopy. PbS nanowires grown by the vapor-liquid-solid method were p-type with hole mobilities up to 49 cm(2)/(V s). We measured a photoresponse time faster than 14 μs with near-unity charge separation efficiency at the contacts. For the first time, we also observed a field-dependent photocurrent decay length, indicating a drift dominant carrier transport at high bias.

We study the synchronization transition (ST) of a modified Kuramoto model on two different types of modular complex networks. It is found that the ST depends on the type of intermodular connections. For the network with decentralized (centralized) intermodular connections, the ST occurs at finite coupling constant (behaves abnormally). Such distinct features are found in the yeast protein interaction network and the Internet, respectively. Moreover, by applying the finite-size scaling analysis to an artificial network with decentralized intermodular connections, we obtain the exponent associated with the order parameter of the ST to be beta approximately 1 different from beta(MF) approximately 1/2 obtained from the scale-free network with the same degree distribution but the absence of modular structure, corresponding to the mean field value.

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We have measured both spectrum- and time-resolved photoluminescence (PL) of InGaN/GaN light-emitting diode structure as a function of an external bias. From spectrum-resolved PL, we observed regions of blueshift and redshift in peak PL energies. From the bias point at which redshift begins, which we attribute to the inversion of electric field due to full compensation of the piezoelectric field (PEF), we estimate PEF to be 2.1±0.2 MV/cm. From time-resolved PL, we found the carrier lifetimes to drastically decrease (2.5 ns–2 ps) with increasing reverse bias. We attribute this decrease to escape tunneling through tilted barriers.

A comparative study on nanotextured high density Mg-doped and undoped GaN Continuous redshift of an emission from 3.23 to 2.85 eV with decreasing excitation density is observed in the photoluminescence spectra of highly doped GaN:Mg. It has been explained by the formation of minibands originating from the overlap of deep levels and shallow acceptor levels. For nominally undoped samples the intensity ratio of a donor-bound exciton line and a donor-acceptor pair line changes dramatically with excitation density due to the limited number of acceptors.