2019
DOI: 10.1007/s11664-019-07588-7
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Study of Structural, Optical and AC Electrical Properties of Chloroindium Phthalocyanine

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Cited by 7 publications
(3 citation statements)
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“…In figure 6(a), the diffuse reflectance spectra of the structures are presented. The c-Si/F 16 PcSnCl 2 -100 °C and c-Si/F 16 PcSnCl 2 -70 °C (solid line and dot plots) exhibit three prominent peaks around 260, 365, and 670 nm, corresponding to the primary bands of the phthalocyanines [39,40]. On the other hand, the PS/F 16 PcSnCl 2 -100 °C and PS/F 16 PcSnCl 2 -70 °C (dashed line and dash-dot plots) demonstrate the attenuation effect caused by the presence of the PS layer in comparison to c-Si.…”
Section: Resultsmentioning
confidence: 99%
“…In figure 6(a), the diffuse reflectance spectra of the structures are presented. The c-Si/F 16 PcSnCl 2 -100 °C and c-Si/F 16 PcSnCl 2 -70 °C (solid line and dot plots) exhibit three prominent peaks around 260, 365, and 670 nm, corresponding to the primary bands of the phthalocyanines [39,40]. On the other hand, the PS/F 16 PcSnCl 2 -100 °C and PS/F 16 PcSnCl 2 -70 °C (dashed line and dash-dot plots) demonstrate the attenuation effect caused by the presence of the PS layer in comparison to c-Si.…”
Section: Resultsmentioning
confidence: 99%
“…2, the C value experiences an increase vs. T , which could be related to more accumulation of charge carriers in higher T that similar results can be found in the literature for other types of dyes like phthalocyanines. 45 The tan δ vs. f profile of TpAzo 1 and TpAzo 2 are presented in Fig. 2 at T = 299, 311, 323, 348, and 368 K. Following Penn's model, 46 the relation between ε ′ of dyes and band gap ( E g ) can be formulated as eqn (9) and (10): 47 where ω p 2 ≡ 4πNe 2 / m is the plasma frequency; E f , ℏ, m , and N represent the Fermi energy, Plank's constant, electron effective mass, and concentration of electrons, which depends on T and E f .…”
Section: Resultsmentioning
confidence: 99%
“…When the square wave signal frequency increases to 5 kHz: t on = 4.37 µs t off = 3.28 µs. As the input signal frequency increases, the capacitance of the Schottky junction becomes smaller [26], and the device's switching speed becomes faster.…”
Section: Dynamic Characterization Experiments Of Fepc-vobjtmentioning
confidence: 99%