Abstract.Results of flow visualization experiments of an impulsively accelerated plane interface between air and SF6 are reported. The shock tube used for the experiments has a larger test section than in previous experiments. The larger extent of uniform test flow relative to nonuniform boundary-layer flow permits unambiguous interpretation of flow-visualization photographs, and the influence of shockwave/boundary-layer interactions is no longer dominant. The strong wall vortex observed in previous studies is not observed in these experiments. It is found that the thin membrane, which forms the initially plane interface, has a significant influence on the initial growth rate of the interface thickness. However, the measured growth rates after the first reflected shock are independent of membrane configuration and are in good agreement with analytical predictions.

Mechanisms of (NH4)2Sx-treated III-V compound triple-junction solar cells incorporating with hybrid electrode Appl. Phys. Lett. 101, 033902 (2012) High-quality surface passivation of silicon using native oxide and silicon nitride layers Appl. Phys. Lett. 101, 021601 (2012) Crystalline silicon surface passivation by intrinsic silicon thin films deposited by low-frequency inductively coupled plasma J. Appl. Phys. 112, 013708 (2012) Imaging ambipolar diffusion of photocarriers in GaAs thin films J. Appl. Phys. 111, 123720 (2012) Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing

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Excellent passivation of n-type crystalline silicon surface is demonstrated by means of intrinsic amorphous silicon carbide (a-SiCx:H) thin films. An optimum CH4/SiH4 ratio is determined, leading to an effective surface recombination velocity, Seff, lower than 54 cm s−1. By adding a constant flow of N2 to the precursor gases, the surface passivation is improved to Seff⩽16 cm s−1. From infrared spectroscopy measurements of these films, it can be deduced that the N2 flow increases the carbon content of the layers for a constant CH4/SiH4 ratio. The dependence of the effective lifetime, τeff, on the excess charge carrier density, Δn, is measured using the quasisteady-state photoconductance technique, and these curves are simulated through an electrical model based on an insulator/semiconductor structure.

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A completely dry low-temperature process has been developed to passivate 3.3 Ω cm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiCx:H) deposition, without breaking the vacuum. We measured effective lifetime, τeff, through a quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma treatment improves surface passivation compared to classical HF dip. Seff values lower than 19 cm s−1 were achieved using a hydrogen plasma treatment and an a-SiCx:H film deposited at 300 °C.