Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

Martı́n, I.; Vetter, Michael; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.; Харченко, А. В.; Cabarrocas, Pere Roca i

doi:10.1063/1.1647702

Cited by 36 publications

(19 citation statements)

References 13 publications

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“…Silicon oxide (SiO2) [5], silicon nitride (SiNx) [5], undoped hydrogenated amorphous silicon (a-Si:H) [5], and undoped hydrogenated amorphous silicon carbide (a-SiC:H) [6] were utilized as dielectric layers. Typical formation temperatures were 1000 o C for SiO2 [5], 350-400 o C for SiNx [5], and 200-300 o C for a-Si:H [5] and a-SiC:H [6]. Since these layers were insulators, local contacts to the c-Si substrates through the dielectric layers were necessary [7,8].…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Back-Surface-Field (BSF) Technology for Crystalline Silicon (c-Si) Thin Film Solar Cells Based on Heterojunctions between Boron-Doped P-Type Hydrogenated Amorphous Silicon and c-Si

Yamanaka¹,

Sakata²,

Shimokawa³

et al. 2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

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We propose a low temperature back-surface field (BSF) technology for crystalline silicon (c-Si) thin film solar cells. The BSF structure has a heterojunction between a p-type c-Si substrate and a boron (B)-doped p-type hydrogenated amorphous silicon (a-Si:H) layer deposited on the back surface of the c-Si substrate at 200 o C. The back-surface recombination velocity, Sb, of minority carriers can be reduced to less than 1000 cm/s in this structure, while the value of Sb is 10 6 cm/s when a B-doped p-type layer is epitaxially grown on the c-Si substrate.We have clarified, from internal photoemission (IPE) and attenuated-total-reflection Fourier transform infrared (ATR-FTIR) spectroscopy measurements, that possible reasons for the observed low value of Sb are (1) the band lineup of the heterojunction (HJ) between B-doped p-type a-Si:H and c-Si and (2) the hydrogen passivation of defects in B-doped a-Si:H.

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Section: Introductionmentioning

confidence: 99%

Low Temperature Back-Surface-Field (BSF) Technology for Crystalline Silicon (c-Si) Thin Film Solar Cells Based on Heterojunctions between Boron-Doped P-Type Hydrogenated Amorphous Silicon and c-Si

Yamanaka¹,

Sakata²,

Shimokawa³

et al. 2006

2006 IEEE 4th World Conference on Photovoltaic Energy Conference

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“…Finally all samples were annealed at 200 ºC for 30 minutes. A commercial set-up (Sinton WTC-120) was used to measure the effective lifetime (τ eff ), using the photoconductance decay technique [14]. We used equation (1) in order to calculate the upper limit of the effective surface recombination (S eff ), where W is the wafer thickness.…”

Section: Plasma Cleaning Of C-simentioning

confidence: 99%

Plasmas for texturing, cleaning, and deposition: towards a one pump down process for heterojunction solar cells

Moreno

Daineka

Cabarrocas

2010

Phys. Status Solidi (c)

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Low temperature plasma deposition of a‐Si:H thin films has emerged as a promising alternative for high efficiency hetero junction (HJ) solar cells. In this work we study plasma processes for texturing and cleaning c‐Si wafers pursuing a low cost dry fabrication process of HJ solar cells. We have studied two independent plasma processes: i) Texturing of c‐Si wafers using SF6 ‐ O2 plasmas in a RIE system, in order to reduce the surface reflectance and therefore improve the light trapping. The effects of the RF power and gas ratio on the c‐Si surface texture have been studied in detail. Highly textured surfaces, with very low reflectance values (around 6% in the range of 300 – 1000 nm) have been achieved. ii) Etching of the native oxide and passivation of the c‐Si surface by plasma, in a standard RF PECVD system. We used SiF4 plasma with optimized conditions for an efficient native oxide removal, and without breaking the vacuum, 40 nm of a‐Si:H were deposited in order to passivate the c‐Si surface. High effective lifetime values were obtained (τeff ≈ 1.5 ms), providing high implicit open circuit voltages (Voc ≈ 0.713 V) and low surface recombination velocities (Seff < 9 cm s‐1). (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The modifications of surface layer such as creation of planar defect or bubble as well as blistering and exfoliation were characterized using transmission electron microscopy (TEM) on a JEOL 200CX microscope. Spectroscopic ellipsometry measurements were performed on a SOPRA apparatus with four angles of incidence ranging from 66 to 78°, on the [0.2–1.2] µm wavelength spectral range—corresponding to1–6 eV energy range—with 0.01 µm step.…”

Section: Experimental Partmentioning

confidence: 99%

“…Plasma‐based ion implantation (PBII) approaches are of the particular interest. Indeed, PBII has been developed to circumvent the limitations of conventional ion implantation such as the requirement of a sophisticated target manipulation and beam raster when treating objects of complicated shape3 and it is a potential low cost solution for the 300 nm silicon wafer technology 4. With in‐line implantation, a large number of (111) and (100) platelet defects can be created in the crystalline silicon with the presence of a large amount of hydrogen 5…”

Section: Introductionmentioning

confidence: 99%

A Comparison of the Hydrogen Incorporation Mechanisms Observed in Plasma, In-line Implantation and PBII Treatments

Arab¹,

David²,

Drouet³

et al. 2007

Plasma Process. Polym.

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Hydrogen was incorporated in silicon by plasma‐based ion implantation (PBII) with 20 kV high voltage acceleration. Samples treated by hydrogen plasma and by in‐line implantation (H 2+, 30 kV) were performed in order to evidence the specific effects promoted by the PBII. Plasma treatments did not induce any significant change in the silicon. With in‐line implantation, only classical defects can be observed in the silicon around the ion projected range. Post‐annealing is needed to obtain the formation of platelets. On the contrary, bubbles and platelets can be observed immediately after PBII implantation. With the highest doses, no post‐annealing is needed to form blisters and cavities, because of the heating due to the PBII treatment.

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Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

Cited by 36 publications

References 13 publications

Low Temperature Back-Surface-Field (BSF) Technology for Crystalline Silicon (c-Si) Thin Film Solar Cells Based on Heterojunctions between Boron-Doped P-Type Hydrogenated Amorphous Silicon and c-Si

Low Temperature Back-Surface-Field (BSF) Technology for Crystalline Silicon (c-Si) Thin Film Solar Cells Based on Heterojunctions between Boron-Doped P-Type Hydrogenated Amorphous Silicon and c-Si

Plasmas for texturing, cleaning, and deposition: towards a one pump down process for heterojunction solar cells

A Comparison of the Hydrogen Incorporation Mechanisms Observed in Plasma, In-line Implantation and PBII Treatments

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