Low Temperature Back-Surface-Field (BSF) Technology for Crystalline Silicon (c-Si) Thin Film Solar Cells Based on Heterojunctions between Boron-Doped P-Type Hydrogenated Amorphous Silicon and c-Si

Yamanaka, Mitsuyuki; Sakata, Isao; Shimokawa, Ryuichi; Takato, Hidetaka

doi:10.1109/wcpec.2006.279719

Cited by 2 publications

(4 citation statements)

References 19 publications

(30 reference statements)

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“…This result is consistent with the observations shown in x3.3 and x3.5 where the passivation properties were similar between Si and Ge surfaces. Referring to previous results 13,22) obtained for Si surfaces, we speculate that OCH 3 originating from methanol and OC 6 H 4 OH from quinhydrone are bonded to Ge surfaces treated with the Q/M solution. The oxidation of these surface bonds can be responsible for the degradation during the passivation (Fig.…”

Section: Chemical Bonds On the Passivated Surfacessupporting

confidence: 88%

“…We think that Ge dangling bonds are terminated by these oxygen related molecules. From the analogy of the case of Si surfaces reported by the present authors, 13) we expect that the oxide layers adsorbed on Ge surfaces can be negatively charged, and this negative charge induces the upward band bending in Ge, as schematically shown in Fig. 8.…”

Section: Passivation Mechanisms Of Q/m-treated Ge Surfacessupporting

confidence: 65%

“…The effects of the surface recombination of minority carriers on both sides of Ge substrates should be suppressed to determine b , as reported for the case of silicon (Si). [7][8][9][10][11][12][13] Posthuma et al 14) reported that the deposition of hydrogenated amorphous silicon (a-Si:H) by plasma-enhanced chemical vapor deposition (PECVD) is effective for passivating the surfaces of Ge substrates for the measurement of b . However, the deposition of a-Si:H films is not suitable for routine and quick measurements of b .…”

Section: Introductionmentioning

confidence: 99%

“…However, the deposition of a-Si:H films is not suitable for routine and quick measurements of b . Wet chemical passivation utilizing iodine/alcohol [7][8][9] or quinhydrone/ alcohol [10][11][12][13] treatment has been successfully applied to Si surfaces. Since these treatments are fairly simple and can be performed at room temperature, they are useful for routine measurements of b in Si.…”

Section: Introductionmentioning

confidence: 99%

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Passivation of Germanium Surfaces by a Quinhydrone–Methanol Solution Treatment

Swain¹,

Takato²,

Sakata³

2011

Jpn. J. Appl. Phys.

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The bulk lifetime of minority carriers, b , in germanium (Ge) is one of the most important material parameters in the design and fabrication of Gebased solar cells. Surface passivation of Ge substrates is indispensable to the accurate evaluation of b . We have found that a newly developed wet chemical treatment, quinhydrone-methanol (Q/M) solution treatment, effectively passivates Ge surfaces, achieving a surface recombination velocity (S) of less than 20 cm/s. It has been clarified that oxide layers containing the molecules from the Q/M solution were formed on the Ge surfaces treated with the Q/M solution. Ge dangling bonds (DBs) are thought to be terminated by these oxygen related molecules. Band bending in the Ge substrates induced by the oxide layers adsorbed on the Q/M-treated Ge surface can contribute to the reduction in S. We also briefly discuss the properties of a recombination center found in the bulk of highly resistive Ge substrates. #

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Section: Chemical Bonds On the Passivated Surfacessupporting

confidence: 88%

Section: Passivation Mechanisms Of Q/m-treated Ge Surfacessupporting

confidence: 65%