Processed optimization for excellent interface passivation quality of amorphous/crystalline silicon solar cells

Kim, Sangho; Dao, Vinh Ai; Lee, Youngseok; Shin, Chonghoon; Park, Jinjoo; Cho, Jaehyun; Yi, Junsin

doi:10.1016/j.solmat.2013.05.042

Cited by 22 publications

(10 citation statements)

References 18 publications

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“…Details about the preparation condition for a‐Si:H(i/p/n + ) in an HIT‐type solar cell can be found in Ref. . The a‐Si:H‐based cells were then fabricated by depositing a‐Si:H(n), a‐Si:H(i), and a‐Si:H(p) layers in subsequence by the PECVD system.…”

Section: Methodsmentioning

confidence: 99%

Current transport studies of amorphous n/p junctions and its application in a‐Si:H/HIT‐type tandem cells

Lee

Dao

Iftiquar

et al. 2015

Progress in Photovoltaics

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This paper presents an understanding of the fundamental carrier transport mechanism in hydrogenated amorphous silicon (a-Si:H)-based n/p junctions. These n/p junctions are, then, used as tunneling and recombination junctions (TRJ) in tandem solar cells, which were constructed by stacking the a-Si:H-based solar cell on the heterojunction with intrinsic thin layer (HIT) cell. First, the effect of activation energy (E a ) and Urbach parameter (E u ) of n-type hydrogenated amorphous silicon (a-Si:H(n)) on current transport in an a-Si:H-based n/p TRJ has been investigated. The photoluminescence spectra and temperature-dependent current-voltage characteristics in dark condition indicates that the tunneling is the dominant carrier transport mechanism in our a-Si:H-based n/p-type TRJ. The fabrication of a tandem cell structure consists of an a-Si:H-based top cell and an HIT-type bottom cell with the a-Si:H-based n/p junction developed as a TRJ in between. The development of a-Si:H-based n/p junction as a TRJ leads to an improved a-Si:H/HIT-type tandem cell with a better open circuit voltage (V oc ), fill factor (FF), and efficiency. The improvements in the cell performance was attributed to the wider band-tail states in the a-Si:H(n) layer that helps to an enhanced tunneling and recombination process in the TRJ. The best photovoltage parameters of the tandem cell were found to be V oc = 1430 mV, short circuit current density = 10.51 mA/cm 2 , FF = 0.65, and efficiency = 9.75%.

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Section: Methodsmentioning

confidence: 99%

Current transport studies of amorphous n/p junctions and its application in a‐Si:H/HIT‐type tandem cells

Lee

Dao

Iftiquar

et al. 2015

Progress in Photovoltaics

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“…It is known that hp would increase the number of ionization events and silicon radicals colliding, leading to the increase of the electron density and the decrease of the electron temperatures, which favor the volume reaction rather than the surface reaction because of the reduction in the mean free path of the generated radials in the plasma. [4] The hp also accomplishes more silane depletion and the lower void fraction inside the film with moderating hydrogen content. It was reported that the atomic hydrogen can react with the silane network and terminate dangling bonds and remove weak bonds, and hp contributes to hydrogen dominating the film.…”

Section: Resultsmentioning

confidence: 99%

“…[14,15] Especially its application to characterize the formation of fully epitaxial Si and the breakdown of epi-Si into mixed phase material has been systematically studied in theory [16][17][18] and confirmed in experiment by the transmission electron microscopy (TEM). [4,6,8,19] The optical properties from SE, as represented by the imaginary part of the dielectric function, provide a clear indication of the crystalline growth and allow the quantification of crystallinity, voids, density, and even hydrogen content of the thin films. [16] The model is important for accurate analysis in SE measurement.…”

Section: Methodsmentioning

confidence: 99%

“…[1,2] One of the key factors for the high performance of the HIT solar cell is that there is no epitaxial growth at the a-Si:H/c-Si interface, which improves the surface passivation and junction properties. [3,4] Unfortunately, an epitaxial layer is formed rather easily at the a-Si/c-Si interface during the plasma-enhanced chemical vapor deposition (PECVD), even without the presence of H 2 gas. [5] It has been widely accepted that this epitaxial Si (epi-Si) is detrimental to solar cells since it includes many structural defects, such as H-related defect complexes, resulting in a low minority carrier lifetime.…”

Section: Introductionmentioning

confidence: 99%

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Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD

et al. 2016

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The epitaxial-Si (epi-Si) growth on the crystalline Si (c-Si) wafer could be tailored by the working pressure in plasmaenhanced chemical vapor deposition (PECVD). It has been systematically confirmed that the epitaxial growth at the hydrogenated amorphous silicon (a-Si:H)/c-Si interface is suppressed at high pressure (hp) and occurs at low pressure (lp). The hp a-Si:H, as a purely amorphous layer, is incorporated in the lp-epi-Si/c-Si interface. We find that: (i) the epitaxial growth can also occur at a-Si:H coated c-Si wafer as long as this amorphous layer is thin enough; (ii) with the increase of the inserted hp layer thickness, lp epi-Si at the interface is suppressed, and the fraction of a-Si:H in the thin films increases and that of c-Si decreases, corresponding to the increasing minority carrier lifetime of the sample. Not only the epitaxial results, but also the quality of the thin films at hp also surpasses that at lp, leading to the longer minority carrier lifetime of the hp sample than the lp one although they have the same amorphous phase.

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“… Relationship between V oc and the carrier lifetime of the heterojunction structure before and after a‐Si:H depostion 68–78…”

Section: Current Status Of High‐efficiency Silicon Solar Cellsmentioning

confidence: 99%

An Efficient Approach to the Total Synthesis of Ammosamide B

et al. 2016

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Processed optimization for excellent interface passivation quality of amorphous/crystalline silicon solar cells

Cited by 22 publications

References 18 publications

Current transport studies of amorphous n/p junctions and its application in a‐Si:H/HIT‐type tandem cells

Current transport studies of amorphous n/p junctions and its application in a‐Si:H/HIT‐type tandem cells

Control of epitaxial growth at a-Si:H/c-Si heterointerface by the working pressure in PECVD

An Efficient Approach to the Total Synthesis of Ammosamide B

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