A Comparison of the Hydrogen Incorporation Mechanisms Observed in Plasma, In-line Implantation and PBII Treatments

Abstract

Hydrogen was incorporated in silicon by plasma‐based ion implantation (PBII) with 20 kV high voltage acceleration. Samples treated by hydrogen plasma and by in‐line implantation (H 2+, 30 kV) were performed in order to evidence the specific effects promoted by the PBII. Plasma treatments did not induce any significant change in the silicon. With in‐line implantation, only classical defects can be observed in the silicon around the ion projected range. Post‐annealing is needed to obtain the formation of platelets. On the contrary, bubbles and platelets can be observed immediately after PBII implantation. With the highest doses, no post‐annealing is needed to form blisters and cavities, because of the heating due to the PBII treatment.

Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium

“…Similarly randomly isolated bubbles are also reported on conventional H implantation followed by an annealing in Ge [4]. This is not the case for Si where only platelets and bubbles are reported after PBII [14]. Nevertheless, plate-like cavity clusters are observed in silicon when implanted at low or medium dose [15,16].…”