Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium

David, Marie‐Laure; Pailloux, F.; Drouet, M.; Beaufort, M. F.; Barbot, J. F.; Simoen, Eddy; Claeys, Cor

doi:10.4028/www.scientific.net/ssp.131-133.101

SSP

2007

DOI: 10.4028/www.scientific.net/ssp.131-133.101

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Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium

Marie‐Laure David¹,

F. Pailloux²,

M. Drouet³

et al.

Abstract: (001) n-type Ge has been implanted at given fluence and intermediate temperature with hydrogen ions using two processes: conventional in-line implantation and plasma based ion implantation. The as-created microstructure has been compared using transmission electron microscopy. In particular, it has been shown that the major differences observed are due to the implantation temperature, much higher during the PBII process. This suggests that plasma based ion implantation could be used for layer transfer in spite… Show more

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“…The projected range and straggling calculated using SRIM 2006(43) are also added. More details on the PBII experiments are given in(44).…”

mentioning

confidence: 99%

Extended Defects Created by Light Ion Implantation in Ge

et al. 2008

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The effect of the implantation temperature in the range room temperature - 300oC has been studied in hydrogen and helium implanted germanium at high fluence and in the energy range of few tens of keV with either conventional implantation or plasma based ion implantation. The microstructure of the as-implanted Ge samples has been studied by Grazing Incidence Small-Angle X-ray Scattering and/or Transmission Electron Microscopy. For H-implanted Ge, small (001) and {111} platelets and {113} defects are nucleated at RT. With increasing the implantation temperature, microcracks, cavities and plate-like cavity clusters are created as well. The formation of these types of defects is ascribed to the interplay between dynamic and kinetic effects occurring during the implantation. As for He implanted Ge, a continuous cavity layer is formed whatever the implantation temperature in the range studied.

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“…The projected range and straggling calculated using SRIM 2006(43) are also added. More details on the PBII experiments are given in(44).…”

mentioning

confidence: 99%

Extended Defects Created by Light Ion Implantation in Ge

et al. 2008

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Comparison of Defects Created by Plasma-Based Ion Implantation and Conventional Implantation of Hydrogen in Germanium

Cited by 1 publication

References 17 publications

Extended Defects Created by Light Ion Implantation in Ge

Extended Defects Created by Light Ion Implantation in Ge

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