Extended Defects Created by Light Ion Implantation in Ge

David, Marie‐Laure; Barbot, J. F.; Rousselet, Sophie; Pailloux, F.; Babonneau, David; Beaufort, M. F.; Pizzagalli, Laurent; Drouet, M.; Simoen, Eddy; Claeys, Cor

doi:10.1149/1.2980301

Cited by 7 publications

(2 citation statements)

References 58 publications

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“…When it was developed in the 1980th [ 21 ], the main goal of PBII (often referred to as PIII, Plasma Immersion Ion Implantation) was to combine the benefits of both ion implantation (deep insertion of species) and the versatility of plasma treatments, e.g., by overcoming the line-of-sight restriction, for metallurgical applications [ 22 , 23 , 24 ]. Although interesting laboratory results have been obtained in different domains [ 25 , 26 , 27 , 28 ], the technique remains quite confidential as the inherent difficulties to upscale are not compensated by the benefits obtained compared to standard plasma treatments.…”

Section: Nitriding With Plasma Implantation and Gasmentioning

confidence: 99%

Low Temperature Nitriding of Metal Alloys for Surface Mechanical Performance

Drouet

Bourhis

2023

Materials

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Metallic alloys are, by essence, ductile and stiff and can support loads without sudden rupture. This ductility becomes a disadvantage when applications require wear resistance. In this case, the hardening of the surface is required while retaining a core performance. Here, nitriding at low temperatures has proven to be beneficial and has potential. In fact, any phase transitions or unwanted compound precipitations that occur at higher temperatures have to be avoided as they would have a deleterious effect on the chemical homogeneity and mechanical properties. The present contribution summarizes the achievements made with such treatments on metallic alloys. We considered the most popular treatments, namely plasma, implantation, and gas nitridings.

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Section: Nitriding With Plasma Implantation and Gasmentioning

confidence: 99%

Low Temperature Nitriding of Metal Alloys for Surface Mechanical Performance

Drouet

Bourhis

2023

Materials

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“…They are used during growth or in more specialized defect engineering processes. For instance, helium has been shown to be useful for gettering applications [1], where cavities formed after NG implantation [2][3][4][5][6][7] can be used to trap impurities coming from active layers of the future device. This phenomenon is also beneficial for relaxing strain in pseudomorphic SiGe/Si heterostructures, and an essential step in the smartcut process used in the production of silicon-oninsulator wafer substrates.…”

Section: Introductionmentioning

confidence: 99%

Migration of noble gas atoms in interaction with vacancies in silicon

Pizzagalli

Charaf-Eddin

2015

Semicond. Sci. Technol.

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First principles calculations in combination with the nudged elastic band method have been performed in order to determine the mobility properties of various noble gas species (He, Ne, Ar, Kr, and Xe) in silicon, a model semiconducting material. We focussed on single impurity, in interstitial configuration or forming a complex with a mono-or a di-vacancy, since the latter are known to be present and to play a key role in the formation of extended defects like bubbles or platelets. We determined several migration mechanisms and associated activation energies and have discussed these results in relation to available experiments. In particular, conflicting measured values of the migration energy of helium are explained by the present calculations. We also predict that helium diffuses solely as an interstitial, while an opposite behaviour is found for heavier species such as Ar, Kr, and Xe, with the prevailing role of complexes in that case. Finally, our calculations indicate that extended defects evolution by Ostwald ripening is possible for helium and maybe neon, but is rather unlikely for heavier noble gas species.

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Investigation of stress and structural damage in H and He implanted Ge using micro‐Raman mapping technique on bevelled samples

Wasyluk

Rainey

Perova

et al. 2011

J Raman Spectroscopy

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The results on structural damage in germanium wafers caused by hydrogen and helium implants of typical doses used in Smart Cut™ Technology (1–6 × 1016 atoms/cm2) are investigated using Raman mapping and spreading resistance profiling techniques. Raman line‐mapping measurements were performed up to the depth of ~400 nm into a Ge substrate (well beyond the limit of visible light penetration depth) using a bevelling technique. From analysis of the Ge–Ge Raman peak it was found that implantation of H and He introduced a different type of stress, tensile and compressive, respectively and significant structural damage with maximum at the projected range. The obtained data shows that hydrogen incorporation in Ge can act as an acceptor. This is undesirable when the hydrogen ion‐cut technology is applied to high resistivity Ge. The crystalline structure after implantation is completely recovered when annealed at 600 °C for both types of implants. Spreading resistance profiling results reveal that 4−8x1015 acceptors/cm3 remain after 600 °C, and these are thought to be because of vacancy related defect clusters. Copyright © 2011 John Wiley & Sons, Ltd.

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Extended Defects Created by Light Ion Implantation in Ge

Cited by 7 publications

References 58 publications

Low Temperature Nitriding of Metal Alloys for Surface Mechanical Performance

Low Temperature Nitriding of Metal Alloys for Surface Mechanical Performance

Migration of noble gas atoms in interaction with vacancies in silicon

Investigation of stress and structural damage in H and He implanted Ge using micro‐Raman mapping technique on bevelled samples

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