Electronic properties of intrinsic and doped amorphous silicon carbide films

Properties study of silicon carbide thin films prepared by electron cyclotron resonance plasma technology

“…An example of plasma optical emission spectrum generated by a SiH 4 and CH 4 glow discharge is shown in Fig.2. When fabricating a-SiC:H film from SiH 4 and CH 4 , it is known that the I(CH * )…”

“…[4]. Silicon carbide films were deposited on silicon substrate with ECR-CVD reactor and photoluminescence was measured at temperatures between 100 and 300 K [5].…”

THE EFFECT OF Xe ION AND NEUTRON IRRADIATION ON THE PROPERTIES OF SiC AND SiC(N) FILMS PREPARED BY PECVD TECHNOLOGY

“…Observable influence of the thermal neutron shielding at the irradiation of structures, using a Cd container is relatively small. The higher measured current after irradiation with Xe ions and neutrons might be due to breaking of the most slightly bonded Si-H, C-H and N-H bonds therefore creating more dangling bonds and so increasing number of defect centers in the films responsible for the higher conductivity [17]. It should be noted that difference in damage production rate for 167 MeV Xe ions and neutrons in SiC films is about 5×10 4 .…”

Neutron-irradiation effect on the electrical characteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology

“…The best efficiency of 18.5% (independently confirmed) was realized with a single layer a-SiC:H(n) emitter with a thickness of 11 nm [1]. The plasma-enhanced chemical vapor deposition (PECVD) technique offers an attractive opportunity to fabricate amorphous hydrogenated N-doped SiC films at intermediate substrate temperatures and it provides high-quality films with good adhesion, good coverage of complicated substrate shapes and high deposition rate [2,3]. The a-SiC:H thin films deposited by PECVD as protective coatings for harsh-environment applications were investigated [4].…”

“…The band at 780 cm À1 can be assigned to Si-C stretching vibration. Two additional peaks centered at 1250 and 1350 cm À1 , can also be attributed to C-H bonds; the absorption bands from 1200 to 1500 cm À1 are due to bending and scissoring modes of CH 2 , CH 3 , Si(CH 3 ), and C(CH 3 ). The signals occur between 930 and 1200 cm À1 , which are superposition of several C-H, Si-O, and Si-N vibrations [10,11].…”