Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films

Martı́n, I.; Vetter, Michael; Orpella, A.; Puigdollers, J.; Cuevas, Andrés; Alcubilla, R.

doi:10.1063/1.1404406

Cited by 128 publications

(63 citation statements)

References 11 publications

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“…a-SiC x :H has low dielectric constant (4.4-4.9) and low moisture intake [12,13], thereby satisfies two conditions needed for a device encapsulation layer. Due to the controllable electrical and optical properties, a-SiC x :H has been investigated intensely in the fields of optoelectronics [14,15], solar cell technology [16], and surface passivation [17,18]. However, the use of a-SiC x :H as the biomedical device coating has gained attention only recently.…”

Section: Low Temperature Deposition Process: Deposition Temperature Lmentioning

confidence: 99%

Characterization of a-SiCx:H thin films as an encapsulation material for integrated silicon based neural interface devices

et al. 2007

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A fully integrated, wireless neural interface device is being developed to free patients from the restriction and risk of infection associated with a transcutaneous wired connection. This device requires a hermetic, biocompatible encapsulation layer at the interface between the device and the neural tissue to maintain long-term recording/stimulating performance of the device. Hydrogenated amorphous silicon carbide (a-SiC x :H) films deposited by a plasma enhanced chemical vapor deposition using SiH 4 , CH 4 , and H 2 precursors were investigated as the encapsulation layer for such device. Si-C bond density, measured by Fourier transform infrared absorption spectrometer, suggests that deposition conditions with increased hydrogen dilution, increased temperature, and low silane flow typically result in increase of Si-C bond density. From the variable angle spectroscopic ellipsometry measurement, no dissolution of a-SiC x :H was observed during soaking tests in 90°C phosphate buffered saline. Conformal coating of the a-SiC x :H in Utah electrode array was observed by scanning electron microscope. Electrical properties were studied by impedance spectroscopy to investigate the performance of a-SiC x :H as an encapsulation layer, and the results showed long term stability of the material.

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Section: Low Temperature Deposition Process: Deposition Temperature Lmentioning

confidence: 99%

Characterization of a-SiCx:H thin films as an encapsulation material for integrated silicon based neural interface devices

et al. 2007

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“…29 Further Ohmic losses can be signicant for thick lms. The charge carrier recombination limits the maximum splitting of the quasi-Fermi levels in the a-SiC:H PEC junction, and subsequently results in larger effective overpotentials.…”

Section: Boron Doping Proling In the A-sic:h Photocathodementioning

confidence: 99%

Gradient dopant profiling and spectral utilization of monolithic thin-film silicon photoelectrochemical tandem devices for solar water splitting

et al. 2015

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A cost-effective and earth-abundant photocathode based on hydrogenated amorphous silicon carbide (a-SiC:H) is demonstrated to split water into hydrogen and oxygen using solar energy. A monolithic a-SiC:H photoelectrochemical (PEC) cathode integrated with a hydrogenated amorphous silicon (a-SiC:H)/nano-crystalline silicon (nc-Si:H) double photovoltaic (PV) junction achieved a current density of À5.1 mA cm À2 at 0 V versus the reversible hydrogen electrode. The a-SiC:H photocathode used no hydrogen-evolution catalyst and the high current density was obtained using gradient boron doping. The growth of high quality nc-Si:H PV junctions in combination with optimized spectral utilization was achieved using glass substrates with integrated micro-textured photonic structures. The performance of the PEC/PV cathode was analyzed by simulations using Advanced Semiconductor Analysis (ASA) software.

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“…On the other hand, excellent S eff values below 100 cm/s have been reported for low temperature deposited dielectric films such as silicon nitride [4] or silicon carbide [5]. In particular, solar cells with intrinsic a-Si:H back surface passivation have reached efficiencies of 20.1% using the COSIMA structure (COntact formation to a-SI:H passivated wafers by Means of Annealing) [6].…”

Section: Introductionmentioning

confidence: 99%

Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

Muñoz

Voz

Blanqué

et al. 2009

Materials Science and Engineering: B

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In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells.An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances ( c~1 0 m·cm 2 ) have been obtained on 2.8 •cm ptype c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.

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Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films

Cited by 128 publications

References 11 publications

Characterization of a-SiCx:H thin films as an encapsulation material for integrated silicon based neural interface devices

Characterization of a-SiCx:H thin films as an encapsulation material for integrated silicon based neural interface devices

Gradient dopant profiling and spectral utilization of monolithic thin-film silicon photoelectrochemical tandem devices for solar water splitting

Development of laser-fired contacts for amorphous silicon layers obtained by Hot-Wire CVD

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