Organic electronic devices: overview and future trends

Puigdollers, J.; Voz, C.; Martı́n, I.; Orpella, A.; Vetter, Michael; Alcubilla, R.

doi:10.1109/sced.2005.1504292

Cited by 24 publications

(30 citation statements)

References 17 publications

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“…This difference is believed to reflect the difference in surface structure and roughness of the underlying spun PMMA and brush PMMA film shown in Figure 3. [21] The texture of pentacene evaporated on crosslinked PMMA brushes showed no discernable difference to that deposited on uncross-linked brush film.…”

Section: Full Papermentioning

confidence: 93%

Organic Thin Film Transistors with Polymer Brush Gate Dielectrics Synthesized by Atom Transfer Radical Polymerization

Pinto¹,

Whiting

Khodabakhsh

et al. 2007

Adv Funct Materials

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Low operating voltage is an important requirement that must be met for industrial adoption of organic field‐effect transistors (OFETs). We report here solution fabricated polymer brush gate insulators with good uniformity, low surface roughness and high capacitance. These ultra thin polymer films, synthesized by atom transfer radical polymerization (ATRP), were used to fabricate low voltage OFETs with both evaporated pentacene and solution deposited poly(3‐hexylthiophene). The semiconductor‐dielectric interfaces in these systems were studied with a variety of methods including scanning force microscopy, grazing incidence X‐ray diffraction and neutron reflectometry. These studies highlighted key differences between the surfaces of brush and spun cast polymethyl methacrylate (PMMA) films.

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Section: Full Papermentioning

confidence: 93%

Organic Thin Film Transistors with Polymer Brush Gate Dielectrics Synthesized by Atom Transfer Radical Polymerization

Pinto¹,

Whiting

Khodabakhsh

et al. 2007

Adv Funct Materials

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show abstract

“…In polycrystalline structures grain boundaries scatter the carriers, resulting in lower mobilities. Since pentacene film grown on PMMA layer has bigger crystalline grains [13] than the one grown on SiO 2 as also shown in figures 5a and 5b, this consequently has led to improved field effect mobilities in PMMA-based devices. The formation of better pentacene films over PMMA is also evident in AFM images (figures 6a and 6b).…”

Section: Discussionmentioning

confidence: 93%

Electrical characteristics of top contact pentacene organic thin film transistors with SiO2 and poly(methyl methacrylate) as gate dielectrics

et al. 2008

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Organic thin film transistors (OTFTs) were fabricated using pentacene as the active layer with two different gate dielectrics, namely SiO2 and poly(methyl methacrylate) (PMMA), in top contact geometry for comparative studies. OTFTs with SiO 2 as dielectric and gold deposited on the rough side of highly doped silicon (n + -Si) as gate electrode exhibited reasonable field effect mobilities. To deal with poor stability and large leakage currents between source/drain and gate electrodes in these devices, isolated OTFTs with reduced source/drain contact area were fabricated by selective deposition of pentacene on SiO 2/PMMA through shadow mask. This led to almost negligible leakage currents and no degradation in electrical performance even after 14 days of storage under ambient conditions. But, the field effect mobilities obtained were lower than 10 −3 cm 2 V −1 s −1 , whereas by using PMMA as gate dielectric with chromium deposited on the polished side of n + -Si as gate electrode, improved field effect mobilities (>0.02 cm 2 V −1 s −1 ) were obtained. PMMA-based OTFTs also exhibited lower leakage currents and reproducible output characteristics even after 30 days of storage under ambient conditions.

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“…In recent years, the non-volatile transistor memory array has been investigated extensively because it can maintain the stored data even when the electrical power supply has been turned off, and the inexpensive polymer materials [3][4][5][6][7] applied in the device are compatible with solution process such as printing, spin-coating and even spry coating on plastic substrates to achieve low cost requirement [8]. In addition, apart from these polymer materials, organic nonvolatile transistor memory devices need to develop the biodegradable, biocompatible, bioresorbable, or even metabolizable products as the components [9].…”

Section: Introductionmentioning

confidence: 99%

High Temperature Hysteresis in Bio-Organic Field-Effect Transistor based on DNA-CTMA as Gate Dielectric

Liang

Mitsumura

et al. 2017

J. Photopol. Sci. Technol.

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Recently, DNA-CTMA lipid complex as the environmentally-friendly materials has been investigated extensively in novel functional optical and electronic devices. We have previously reported that the hysteresis mechanism of the nonvolatile transistor memory device in lower temperature region from -150 ~ -20 o C (L. Liang et al. Organic Electronics 28, 2016, 294-298). In this study, the hysteresis mechanism in the high temperature region range from 25 ~ 150 o C has been investigated through studying the temperature dependence of transfer characteristics, X-ray diffraction patterns (XRD), differential scanning calorimetry (DSC) as well as the dielectric performance of DNA-CTMA complex. The result indicates that the dipoles inside the DNA-CTMA stacking crystalline structure contribute to the appearance of hysteresis in bio-OTFT device at the high temperature.

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Organic electronic devices: overview and future trends

Cited by 24 publications

References 17 publications

Organic Thin Film Transistors with Polymer Brush Gate Dielectrics Synthesized by Atom Transfer Radical Polymerization

Organic Thin Film Transistors with Polymer Brush Gate Dielectrics Synthesized by Atom Transfer Radical Polymerization

Electrical characteristics of top contact pentacene organic thin film transistors with SiO2 and poly(methyl methacrylate) as gate dielectrics

High Temperature Hysteresis in Bio-Organic Field-Effect Transistor based on DNA-CTMA as Gate Dielectric

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