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We measured absolute partial cross sections for the formation of various singly charged and doubly charged positive ions produced by electron impact on silicon tetrachloride (SiCl4) using two different experimental techniques, a time-of-flight mass spectrometer (TOF-MS) and a fast-neutral-beam apparatus. The energy range covered was from the threshold to 900 eV in the TOF-MS and to 200 eV in the fast-neutral-beam apparatus. The results obtained by the two different experimental techniques were found to agree very well (better than their combined margins of error). The SiCl3(+) fragment ion has the largest partial ionization cross section with a maximum value of slightly above 6x10(-20) m2 at about 100 eV. The cross sections for the formation of SiCl4(+), SiCl+, and Cl+ have maximum values around 4x10(-20) m2. Some of the cross-section curves exhibit an unusual energy dependence with a pronounced low-energy maximum at an energy around 30 eV followed by a broad second maximum at around 100 eV. This is similar to what has been observed by us earlier for another Cl-containing molecule, TiCl4 [R. Basner, M. Schmidt, V. Tamovsky, H. Deutsch, and K. Becker, Thin Solid Films 374 291 (2000)]. The maximum cross-section values for the formation of the doubly charged ions, with the exception of SiCl3(++), are 0.05x10(-20) m2 or less. The experimentally determined total single ionization cross section of SiCl4 is compared with the results of semiempirical calculations.

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We measured absolute partial cross sections for the formation of various singly charged positive ions produced by electron impact on SiCl x (x = 1–4) using two different experimental techniques, a time-of-flight mass spectrometer (TOF-MS) and a fast-neutral-beam apparatus. The energy range covered was from the threshold to 900 eV in the TOF-MS and to 200 eV in the fast neutral beam apparatus. In the case of SiCl4, the absolute cross sections obtained by the two different experimental techniques were found to agree very well. The ionization of the SiCl x (x = 1–3) free radicals can only be studied using the fast-beam technique. Some of the partial cross section curves were found to exhibit an unusual energy dependence with a pronounced low-energy maximum at an energy around 30 eV, which is in some cases followed by a shallow minimum at about 40 eV and a broad second maximum at around 100 eV. This pronounced low-energy maximum is indicative of the presence of an indirect ionization channel and is similar to what has been observed earlier for TiCl4 and the TiCl x (x = 1–3) radicals. Similarities in the contribution of the indirect ionization channel to the formation of the various SiCl x + and TiCl x + (x = 1–4) ions will be highlighted in this paper.

This paper describes the design and operation of the Falcon ion source. It is based on conventional design of anode layer thrusters. This ion source is a versatile, compact, affordable, and highly functional in the research field of the fusion materials. The reversed magnetic field configuration of the source allows precise focusing of the ion beam into small spot of ≈3 mm and also provides the limited capabilities for impurity mass-separation. As the result, the source generates steady-state ion beam, which irradiates surface with high heat (0.3 - 21 MW m(-2)) and particle fluxes (4 × 10(21) - 3 × 10(23) m(-2)s(-1)), which approaches the upper limit for the flux range expected in ITER.

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Abstract. The paper investigates the options to increase the production yield of temperature compensated surface acoustic wave (SAW) devices with a defi ned range of operational frequencies. The paper focuses on the preparation of large wafers with SiO 2 and AlN/Si 3 N 4 depositions. Stability of the intermediate SiO 2 layer is achieved by combining high power density UV radiation with annealing in high humidity environment. A uniform thickness of the capping AlN layer is achieved by local high-rate etching with a focused ion beam emitted by the FALCON ion source. Operation parameters and limitations of the etching process are discussed.

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