Electron-impact ionization of the SiCl3 radical

Gutkin, Michael; Mahoney, J.; Tarnovsky, V.; Deutsch, Hans‐Peter; Becker, K.

doi:10.1016/j.ijms.2008.07.032

Cited by 8 publications

(16 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…þ and SiCl þ , [101][102][103] and that SiCl 2 and SiCl yield predominantly SiCl 2 þ and SiCl þ , respectively. 104,105 These situations appear to lead to the present QMS measurements that SiCl 3…”

Section: Fig 16 Integrated Qms Intensities Of Seven Ionic Species Siclmentioning

confidence: 64%

“…14. These situations have so far been indicated in only a few QMS measurements [89][90][91] and modeling calculations, 88 being ascribed partly to the difference between the total electron ionization cross sections for SiCl x (x ¼ 1-4) 101,104,105,108,109 and Cl 2 (Refs. 107, 110-112) molecules; in effect, the former is about 2-3 times larger than that the latter.…”

Section: Fig 16 Integrated Qms Intensities Of Seven Ionic Species Siclmentioning

confidence: 99%

See 1 more Smart Citation

Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

Nakazaki

Tsuda

Takao

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

Atomic- or nanometer-scale surface roughening has been investigated during Si etching in inductively coupled Cl2 plasmas, as a function of rf bias power or ion incident energy Ei, by varying feed gas flow rate, wafer stage temperature, and etching time. The experiments revealed two modes of surface roughening which occur depending on Ei: one is the roughening mode at low Ei < 200–300 eV, where the root-mean-square (rms) roughness of etched surfaces increases with increasing Ei, exhibiting an almost linear increase with time during etching (t < 20 min). The other is the smoothing mode at higher Ei, where the rms surface roughness decreases substantially with Ei down to a low level < 0.4 nm, exhibiting a quasi-steady state after some increase at the initial stage (t < 1 min). Correspondingly, two different behaviors depending on Ei were also observed in the etch rate versus Ei curve, and in the evolution of the power spectral density distribution of surfaces. Such changes from the roughening to smoothing modes with increasing Ei were found to correspond to changes in the predominant ion flux from feed gas ions Clx+ to ionized etch products SiClx+ caused by the increased etch rates at increased Ei, in view of the results of several plasma diagnostics. Possible mechanisms for the formation and evolution of surface roughness during plasma etching are discussed with the help of Monte Carlo simulations of the surface feature evolution and classical molecular dynamics simulations of etch fundamentals, including stochastic roughening and effects of ion reflection and etch inhibitors.

show abstract

Section: Fig 16 Integrated Qms Intensities Of Seven Ionic Species Siclmentioning

confidence: 64%

Section: Fig 16 Integrated Qms Intensities Of Seven Ionic Species Siclmentioning

confidence: 99%

Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

Nakazaki

Tsuda

Takao

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…The electron impact ionization of the SiCl X species is very important for the understanding and modelling of the interaction of silicon-chlorine plasmas with various materials. There are a few measurements [5][6][7][8][9] of ionization cross sections with electron impact on these molecules. The authors of [5][6][7][8] have calculated total ionization cross sections up to 200 eV using the semi-empirical Deutsch-Mark (DM) formula.…”

Section: Introductionmentioning

confidence: 99%

Electron impact ionization of plasma important SiCl_X(X= 1–4) molecules: theoretical cross sections

Kothari¹,

Pandya

Joshipura

2011

J. Phys. B: At. Mol. Opt. Phys.

View full text Add to dashboard Cite

Electron impact ionization of SiCl X (X = 1-4) molecules is less studied but an important process for understanding and modelling the interactions of silicon-chlorine plasmas with different materials. The SiCl 3 radical is a major chloro-silicon species involved in the CVD (chemical vapour deposition) of silicon films from SiCl 4 /Ar microwave plasmas. We report in this paper the total ionization cross sections for electron collisions on these silicon compounds at incident energies from the ionization threshold to 2000 eV. We employ the 'complex scattering potential-ionization contribution' method and identify the relative importance of various channels, with ionization included in the cumulative inelastic scattering. New results are also presented on these exotic molecular targets. This work is significant in view of the paucity of theoretical studies on the radicals SiCl X (X = 1-3) and on SiCl 4 .

show abstract

“…In particular, the signals for SiCl þ at m/e ¼ 63 and SiCl 3 þ at m/e ¼ 133 are much too intense to be due to cracking in the mass spectrometer ionizer of SiCl 4 . Figure FIG 8 displays these measurements in addition to the electron impact ionization cross section measured by Becker and coworkers 43 for SiCl 3 radicals. One of the more likely stable species, Si 2 Cl 6 , can seemingly be ruled out based on its reported cracking pattern with nearly equal SiCl:SiCl 2 :SiCl 3 intensities (70:100:96), and a modest parent ion (3.5 for m/e ¼ 268).…”

Section: F Product Identification and Mechanisms For Formation And Dmentioning

confidence: 95%

“…Also shown are the electron impact ionization cross section measurements by Becker and co-workers (Ref 43). Emission current ¼ 1 mA.…”

mentioning

confidence: 99%

Interactions of chlorine plasmas with silicon chloride-coated reactor walls during and after silicon etching

Khare

Srivastava

Donnelly

2012

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

Mass and Auger electron spectroscopy studies of the interactions of atomic and molecular chlorine on a plasma reactor wallHigh temperature reaction of nitric oxide with Si surfaces: Formation of Si nanopillars through nitride masking and oxygen etching Modification of a high vacuum, crossed molecular beam scattering system to perform angle-resolved, gassurface scattering studies under ultrahigh vacuum conditions Rev.The interplay between chlorine inductively coupled plasmas (ICP) and reactor walls coated with silicon etching products has been studied in situ by Auger electron spectroscopy and line-of-sight mass spectrometry using the spinning wall method. A bare silicon wafer mounted on a radio frequency powered electrode (À108 V dc self-bias) was etched in a 13.56 MHz, 400 W ICP. Etching products, along with some oxygen due to erosion of the discharge tube, deposit a Si-oxychloride layer on the plasma reactor walls, including the rotating substrate surface. Without Si-substrate bias, the layer that was previously deposited on the walls with Si-substrate bias reacts with Cl-atoms in the chlorine plasma, forming products that desorb, fragment in the plasma, stick on the spinning wall and sometimes react, and then desorb and are detected by the mass spectrometer. In addition to mass-to-charge (m/e) signals at 63, 98, 133, and 168, corresponding to SiCl x (x ¼ 1 -4), many Si-oxychloride fragments with m/e ¼ 107, 177, 196, 212, 231, 247, 275, 291, 294, 307, 329, 345, 361, and 392 were also observed from what appear to be major products desorbing from the spinning wall. It is shown that the evolution of etching products is a complex "recycling" process in which these species deposit and desorb from the walls many times, and repeatedly fragment in the plasma before being detected by the mass spectrometer. SiCl 3 sticks on the walls and appears to desorb for at least milliseconds after exposure to the chlorine plasma. Notably absent are signals at m/e ¼ 70 and 72, indicating little or no Langmuir-Hinshelwood recombination of Cl on this surface, in contrast to previous studies done in the absence of Si etching.

show abstract

Electron-impact ionization of the SiCl3 radical

Cited by 8 publications

References 18 publications

Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

Electron impact ionization of plasma important SiCl_X(X= 1–4) molecules: theoretical cross sections

Interactions of chlorine plasmas with silicon chloride-coated reactor walls during and after silicon etching

Contact Info

Product

Resources

About

Electron-impact ionization of the SiCl3 radical

Cited by 8 publications

References 18 publications

Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

Two modes of surface roughening during plasma etching of silicon: Role of ionized etch products

Electron impact ionization of plasma important SiClX(X= 1–4) molecules: theoretical cross sections

Interactions of chlorine plasmas with silicon chloride-coated reactor walls during and after silicon etching

Contact Info

Product

Resources

About

Electron impact ionization of plasma important SiCl_X(X= 1–4) molecules: theoretical cross sections