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The 3D-printed Fe3O4/MBG/PCL scaffolds with potential multifunctionality would be promising for use in the treatment and regeneration of large bone defects after tumor resection.

This paper investigated the growth of (AlxGa1−x)2O3 thin films on semi-insulating (010) Ga2O3 substrates over the entire Al composition range (0% < x ≤ 100%) via metalorganic chemical vapor deposition (MOCVD). For the Al composition x < 27%, high quality single phase β-(AlxGa1−x)2O3 was achieved. A mixture of β and γ phases existed in (AlxGa1−x)2O3 when Al composition ranged between 27% and 40%, whereas a single γ-phase was observed for the films with Al composition x > 40%. The transition from the β to γ phase in AlGaO alloys was observed from x-ray diffraction spectra. The growth of γ-phase AlGaO with higher Al content was further confirmed via atomic resolution scanning transmission electron microscopy imaging and nanodiffraction. Compositional and statistical analyses performed on data acquired from atom probe tomography provided insight on the local compositional homogeneity in AlGaO films with different Al compositions. For AlGaO with pure β or γ phases, the Al composition distribution showed homogeneity with similar Al composition values as extracted from the x-ray diffraction peak positions. For AlGaO films with mixed β and γ phases, inhomogeneity in the Al composition distribution became more obvious in the nm scale. A mechanism was proposed for the observed phase transformation between β and γ phases in MOCVD growth of AlGaO films.

These two authors contributed equally to this work. The ability to manipulate antiferromagnetic (AF) moments is a key requirement for the emerging field of antiferromagnetic spintronics. Electrical switching of bi-state AF moments has been demonstrated in metallic AFs, CuMnAs and Mn 2 Au. 1-5 Recently, current-induced "saw-tooth" shaped Hall resistance was reported in Pt/NiO bilayers, 6-9 while its mechanism is under debate. Here, we report the first demonstration of convincing, non-decaying, steplike electrical switching of tri-state Néel order in Pt/-Fe 2 O 3 bilayers. Our experimental data, together with Monte-Carlo simulations, reveal the clear mechanism of the switching behavior of -Fe 2 O 3 Néel order among three stable states. We also show that the observed "saw-tooth" Hall resistance is due to an artifact of Pt, not AF switching, while the signature of AF switching is step-like Hall signals. This demonstration of electrical control of magnetic moments in AF insulator (AFI) films will greatly expand the scope of AF spintronics by leveraging the large family of AFIs.Spin-orbit torque (SOT) induced switching of ferromagnets (FM) by an adjacent heavy metal (HM) has raised wide interests in recently years, 10-12 where a charge current in the HM generates spins at the HM/FM interface via the spin Hall effect (SHE). AFs offer the advantage of no stray field, robustness against external field, THz response, and abundance of material

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