Deterministic switching of a perpendicularly polarized magnet using unconventional spin–orbit torques in WTe2

Kao, I-Hsuan; Muzzio, Ryan; Zhang, Hantao; Zhu, Menglin; Gobbo, Jacob; Yuan, Sean; Weber, Daniel; Rao, Rahul; Li, Jiahan; Edgar, James H.; Goldberger, Joshua E.; Yan, Jiaqiang; Mandrus, David; Hwang, Jinwoo; Cheng, Ran; Katoch, Jyoti; Singh, Simranjeet

doi:10.1038/s41563-022-01275-5

Cited by 104 publications

(71 citation statements)

References 30 publications

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“…(See Supporting Information S5 for details. ) − Figure a shows a schematic and optical microscopy image of vdW FGT/ h -BN and FGT/WSe 2 heterostructures in the same FGT channel for the local modulation of H k with the magnetic proximity effects. Multilayer WSe 2 lies on top of the right Hall electrodes for the measurement of anomalous Hall signals and the H k for two different interfaces in a single device.…”

Section: Resultsmentioning

confidence: 99%

“…Therefore, we speculate that control of the magnetic properties in 2D vdW magnet-based heterostructure systems can be effectively realized by inserting an ultrathin adjacent layer with large spin–orbit coupling, together with an ultrathin 2D magnet. Furthermore, in conjunction with the recent discovery of magnetization switching in the same material ,,, using the spin–orbit torque, the realization of multilevel resistance states in a single channel, which could be an important potential for neuromorphic applications based on vdW magnets, might be feasible.…”

Section: Resultsmentioning

confidence: 99%

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Interface Engineering of Magnetic Anisotropy in van der Waals Ferromagnet-based Heterostructures

et al. 2021

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Interface engineering is an effective approach to tune the magnetic properties of van der Waals (vdW) magnets and their heterostructures. The prerequisites for the practical utilization of vdW magnets and heterostructures are a quantitative analysis of their magnetic anisotropy and the ability to modulate their interfacial properties, which have been challenging to achieve with conventional methods. Here we characterize the magnetic anisotropy of Fe3GeTe2 layers by employing the magnetometric technique based on anomalous Hall measurements and confirm its intrinsic nature. In addition, on the basis of the thickness dependences of the anisotropy field, we identify the interfacial and bulk contributions. Furthermore, we demonstrate that the interfacial anisotropy in Fe3GeTe2-based heterostructures is locally controlled by adjacent layers, leading to the realization of multiple magnetic behaviors in a single channel. This work proposes that the magnetometric technique is a useful platform for investigating the intrinsic properties of vdW magnets and that functional devices can be realized by local interface engineering.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Interface Engineering of Magnetic Anisotropy in van der Waals Ferromagnet-based Heterostructures

et al. 2021

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“…We, therefore, turn to an analysis of the broken symmetries in WTe 2 . We point out that low symmetry WTe 2 has recently shown the capability of generating both in-plane and out-of-plane spin polarization in charge-spin conversion experiments. − It also enables field-free switching of PMA magnetic material, which eases the application of PMA materials in MRAM applications. − …”

mentioning

confidence: 97%

“…The only symmetry in the WTe 2 crystal lattice ab plane is the mirror symmetry about the bc plane . This unique symmetry breaking allows out-of-plane damping-like torque to be generated, , enabling efficient switching of the out-of-plane magnetization of the adjacent magnetic material …”

mentioning

confidence: 99%

“…29 This unique symmetry breaking allows out-ofplane damping-like torque to be generated, 30,31 enabling efficient switching of the out-of-plane magnetization of the adjacent magnetic material. 24 A 20 nm thick YIG thin film used in our experiment is epitaxially grown on the (111)-oriented Gd 3 Ga 5 O 12 (GGG) substrate by off-axis sputtering. 32 WTe 2 flakes are then mechanically exfoliated from a flux-grown crystal and dry transferred onto the clean top YIG surface without touching any other substances.…”

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Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe₂

Wang

Verma

et al. 2022

Nano Lett.

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Engineering magnetic anisotropy in a ferro-or ferrimagnetic (FM) thin film is crucial in spintronic device. One way to modify the magnetic anisotropy is through the surface of the FM thin film. Here, we report the emergence of a perpendicular magnetic anisotropy (PMA) induced by interfacial interactions in a heterostructure comprised of a garnet ferrimagnet, Y3Fe5O12 (YIG), and the low-symmetry, high spin orbit coupling (SOC) transition metal dichalcogenide, WTe2. At the same time, we also observed an enhancement in Gilbert damping in the WTe2 covered YIG area. Both the magnitude of interface-induced PMA and the Gilbert damping enhancement have no observable WTe2 thickness dependence down to single quadruple-layer, indicating that the interfacial interaction plays a critical role. The ability of WTe2 to enhance the PMA in FM thin film, combined with its previously reported capability to generate out-of-plane damping like spin torque, makes it desirable for magnetic memory applications.

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Engineering Symmetry Breaking Enables Efficient Bulk Spin‐Orbit Torque‐Driven Perpendicular Magnetization Switching

Chen,

Zhang,

et al. 2023

Adv Funct Materials

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To overcome the interfacial nature of spin‐orbit torque (SOT) in bilayers, novel bulk SOT (BSOT) is widely investigated to implement high‐density and low‐power spintronic devices. However, the underlying mechanism of efficient BSOT switching remains unclear, especially the anomalously enhanced effective spin Hall angle (θSH) with increasing ferromagnet thickness (tFM), due to lacking simple and high‐tunable material systems. Here, a series of Pt/Co multilayers with invariable thickness gradient and varying stacking numbers is designed to systematically explore BSOT origin and enable efficient switching via engineering symmetry breaking. As tFM increases, the critical current density decreases while the switching efficiency and θSH build up. Comparative experiments directly demonstrate that gradient‐induced local spin current is more efficient than that in the bilayer. Moreover, x‐ray absorption spectroscopy (XAS) results reveal that the increasing stacking number can effectively engineer the symmetry breaking at Pt/Co interface to induce strong interfacial spin‐orbit coupling. On this basis, it is concluded that the BSOT effect, as well as the anomalously enhanced switching efficiency, and θSH arises from gradient‐induced bulk and interface symmetry breaking. These findings clarify the underlying mechanism of BSOT, and broaden the scope of material engineering to improve switching efficiency and inspire more memory and computing applications.

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Deterministic switching of a perpendicularly polarized magnet using unconventional spin–orbit torques in WTe2

Cited by 104 publications

References 30 publications

Interface Engineering of Magnetic Anisotropy in van der Waals Ferromagnet-based Heterostructures

Interface Engineering of Magnetic Anisotropy in van der Waals Ferromagnet-based Heterostructures

Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe₂

Engineering Symmetry Breaking Enables Efficient Bulk Spin‐Orbit Torque‐Driven Perpendicular Magnetization Switching

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Deterministic switching of a perpendicularly polarized magnet using unconventional spin–orbit torques in WTe2

Cited by 104 publications

References 30 publications

Interface Engineering of Magnetic Anisotropy in van der Waals Ferromagnet-based Heterostructures

Interface Engineering of Magnetic Anisotropy in van der Waals Ferromagnet-based Heterostructures

Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe2

Engineering Symmetry Breaking Enables Efficient Bulk Spin‐Orbit Torque‐Driven Perpendicular Magnetization Switching

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Enhancing Perpendicular Magnetic Anisotropy in Garnet Ferrimagnet by Interfacing with Few-Layer WTe₂