Evidence of the Topological Hall Effect in Pt/Antiferromagnetic Insulator Bilayers

Cheng, Yang; Yu, Sisheng; Zhu, Menglin; Hwang, Jinwoo; Yang, Fengyuan

doi:10.1103/physrevlett.123.237206

Cited by 47 publications

(59 citation statements)

References 44 publications

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“…Alternatively, an indirect transport‐measurement method, i.e., topological Hall measurement, has been used to detect the skyrmion state in ferromagnet and antiferromagnet. [ 114,152,159–162 ] The THE originates from scalar spin chirality

([], χ_{i j k} = {\overset{S}{true}}_{i} \cdot ({\overset{true\to}{boldS}}_{j} \times {\overset{true\to}{boldS}}_{k}))

concomitant with noncoplanar spin configurations. When electrons pass through a skyrmion, the spin of the conduction electron will experience an emergent magnetic field (Berry curvature) through interaction with skyrmions, which deflects the electrons perpendicular to the current direction.…”

Section: Topological Structures In Magnetic Thin Films and Heterostrumentioning

confidence: 99%

“…observed a clear THE signal (the maximum ρ THE ≈ 1.0 nΩ cm) in Pt/antiferromagnetic insulator bilayers (Pt/Cr 2 O 3 ) at temperatures near or above the T N (307 K for bulk Cr 2 O 3 ), indicating the emergence of nontrivial spin textures in antiferromagnetic insulator oxide films. [ 162 ] These studies demonstrate that magnetic oxide epitaxial thin films and heterostructures represent an exciting class of materials exhibiting THE originating from topologically nontrivial spin textures, which are highly tunable through doping, strain and interface engineering.…”

Section: Topological Structures In Magnetic Thin Films and Heterostrumentioning

confidence: 99%

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Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures

et al. 2020

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Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high‐density nonvolatile memories as well as future energy‐efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high‐quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.

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([], χ_{i j k} = {\overset{S}{true}}_{i} \cdot ({\overset{true\to}{boldS}}_{j} \times {\overset{true\to}{boldS}}_{k}))

Section: Topological Structures In Magnetic Thin Films and Heterostrumentioning

confidence: 99%

Section: Topological Structures In Magnetic Thin Films and Heterostrumentioning

confidence: 99%

Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures

et al. 2020

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“…S2 [27]. Furthermore, after the sample has been subjected to a high writing current pulse, subsequent measurements at a lower current may reveal a sawtooth of different magnitudes, and in some cases, even altering the sawtooth shape into steplike signals [32], as illustrated in Supplemental Material Fig. S3 [27].…”

Section: Substratementioning

confidence: 99%

The Heat in Antiferromagnetic Switching

Zink

2019

Physics

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Much theoretical and experimental attention has been focused on the electrical switching of the antiferromagnetic (AFM) Néel vector via spin-orbit torque. Measurements employing multiterminal patterned structures of Pt=AFM show recurring signals of the supposedly planar Hall effect and magnetoresistance, implying AFM switching. We show in this Letter that similar signals have been observed in structures with and without the AFM layer, and of an even larger magnitude using different metals and substrates. These may not be the conclusive evidence of spin-orbit torque switching of AFM, but the thermal artifacts of patterned metal structure on substrate. Large current densities in the metallic devices, beyond the Ohmic regime, can generate unintended anisotropic thermal gradients and voltages. AFM switching requires unequivocal detection of the AFM Néel vector before and after SOT switching.

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“…It is one of the few single-phase materials that demonstrates an uncompensated surface magnetization that is switchable by its intrinsic magnetoelectric effect at room-temperature 3,8 . This materials configuration opens a diverse set of ways to create energy efficient spintronic devices [8][9][10][11][12][13][14][15] .…”

mentioning

confidence: 99%

Bulk-like dielectric and magnetic properties of sub 100 nm thick single crystal Cr2O3 films on an epitaxial oxide electrode

Luo

Novakov

et al. 2020

Sci Rep

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The manipulation of antiferromagnetic order in magnetoelectric Cr2O3 using electric field has been of great interest due to its potential in low-power electronics. The substantial leakage and low dielectric breakdown observed in twinned Cr2O3 thin films, however, hinders its development in energy efficient spintronics. To compensate, large film thicknesses (250 nm or greater) have been employed at the expense of device scalability. Recently, epitaxial V2O3 thin film electrodes have been used to eliminate twin boundaries and significantly reduce the leakage of 300 nm thick single crystal films. Here we report the electrical endurance and magnetic properties of thin (less than 100 nm) single crystal Cr2O3 films on epitaxial V2O3 buffered Al2O3 (0001) single crystal substrates. The growth of Cr2O3 on isostructural V2O3 thin film electrodes helps eliminate the existence of twin domains in Cr2O3 films, therefore significantly reducing leakage current and increasing dielectric breakdown. 60 nm thick Cr2O3 films show bulk-like resistivity (~ 1012 Ω cm) with a breakdown voltage in the range of 150–300 MV/m. Exchange bias measurements of 30 nm thick Cr2O3 display a blocking temperature of ~ 285 K while room temperature optical second harmonic generation measurements possess the symmetry consistent with bulk magnetic order.

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Evidence of the Topological Hall Effect in Pt/Antiferromagnetic Insulator Bilayers

Cited by 47 publications

References 44 publications

Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures

Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures

The Heat in Antiferromagnetic Switching

Bulk-like dielectric and magnetic properties of sub 100 nm thick single crystal Cr2O3 films on an epitaxial oxide electrode

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