Photovoltaic effects on Franz-Keldysh oscillations in photoreflectance spectra: Application to determination of surface Fermi level and surface recombination velocity in undoped GaAs∕n-type GaAs epitaxial layer structures.

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We applied a Cat-CVD (catalytic chemical vapor deposition) passivation film to AlGaN/GaN HEMTs, to resolve the trade-off between their drain current transient time and gatedrain break down voltage. We did not employ any field plate because it degrades high frequency operation over C-band. The SiN passivation film, deposited after a NH 3 treatment, resulted in less transient time and less gate leakage current than conventional PE-CVD passivation. A T-shaped gate HEMT fabricated by this technique, with Lg = 0.4 µm and Wg = 50.4 mm, delivered an output power over 140 W (2.79 W/mm), which was a record power at C-band.

State$, wr Be Commisslo n, nor any per son tc Ung on behalf of the Com m.108 1 on: A. Makes any warranty or repres entatton, expres Bed or impU ed, Mth res peet to the accuracy , comple tene 03, or use fulnen of the information contained li thi s report, or that the uae of any /nformation , apparatua, method, or Procesa disclosed In thint rpry,rt mni, "04 1.06 6 u prly*ty owned rluh.; .r B. Assumes any Uabilittes with reepect to the use 01, or for damages re/ulting from the m of Hy idormation. applaratum , melhod, or procm dleclosed M this reporL As used in the above, "perion acting on bebalf of the Commission " includea any employee or contractor of Lhe Commisai on, or uployee of auch contractor, to me extent uit MA ST ER such employee or cor.tractor of the Comm188 ton, or employee of such contracir prepares, dIsseminat es, or provideB accesi to, Any information purBuant to his employmen t or contract with me Commillon , or his employme nt with auch contractor .

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A dry surface passivation of GaAs using the combination of H2S gas with an ArF excimer laser was examined. Native oxides at the surface were etched away by laser irradiation in vacuum. By subsequent laser irradiation in a H2S gas ambient, the surface was covered with sulfur atoms. The dry passivation technique in this study is comparable to the wet passivation process using (NH4)2Sx treatment in terms of the sulfur coverage ratio.

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