A high reliability GaN HEMT with SiN passivation by Cat-CVD

Kunii, T.; Totsuka, Masahiro; Kamo, Yoshitaka; Yamamoto, Yoshiyuki; Takeuchi, Hideo; Shimada, Y.; Shiga, T.; Matsuda, Hiroyuki; Kitano, Toshiaki; Miyakuni, S.; Nakatsuka, S.; Inoue, Akihisa; Oku, Tatsuya; Nanjo, Takuma; Oishi, Toshiyuki; Ishikawa, T.; Matsuda, Yoshihisa

doi:10.1109/csics.2004.1392535

Cited by 9 publications

(6 citation statements)

References 6 publications

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“…12) In contrast to other reports, [7][8][9][10] we found that not only were the RF characteristics enhanced but the DC characteristics were also deteriorated by nitride-based plasma pretreatment. Edwards et al 9,13) used a low power plasma condition (35 W) of NH 3 pretreatment as compared with our plasma condition (60 W); therefore, we believe that our relatively high RF power induced the deterioration of DC characteristics but had little effect on the RF characteristics of the devices.…”

Section: Resultsmentioning

confidence: 91%

Effects of Nitride-Based Plasma Pretreatment Prior to SiN_x Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates

Kim

Choi

et al. 2010

Jpn. J. Appl. Phys.

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The effects of nitride-based plasma pretreatment on the output characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on silicon substrates are investigated. N2 and NH3 plasma pre-treatment methods are studied to overcome the RF dispersion phenomenon caused by nitrogen-vacancy (VN)-related defect reduction. It is found that the nitride-based plasma pretreatment is effective to overcome the RF dispersion in AlGaN/GaN HEMTs on Si. The NH3 plasma pretreatment markedly reduced RF dispersion from 63 to 1%. This is considered to be attributable to the reduction of the effective VN-related defect density and elimination of carbon/oxide residuals on the surface of AlGaN/GaN HEMTs. A NH3 plasma pretreatment prior to SiN x 100 nm passivation in the AlGaN/GaN HEMTs on Si markedly improves the total output power from 15 to 18.1 dBm under the operating conditions of V DS = 15 V/V GS = -1 V.

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Section: Resultsmentioning

confidence: 91%

Effects of Nitride-Based Plasma Pretreatment Prior to SiN_x Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates

Kim

Choi

et al. 2010

Jpn. J. Appl. Phys.

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“…On the other hand the curve for the Cat-CVD SiN approximately leveled off in the region from 10 -6 to 10 -3 second, although being upward over 1 millisecond and a ratio at 10 -7 second were larger than that for the PE-CVD SiN passivation. As we mentioned in a previous work [6] the Cat-CVD technique after NH 3 surface treatment is a better method of passivating SiN films than PE-CVD, because the surface trap density is reduced. These results indicated that Cat-CVD is an effective method for suppressing current collapses, resulting from the reduction of the surface trap density.…”

Section: B Pulsed I-v Characteristicsmentioning

confidence: 90%

“…We have previously reported that the Cat-CVD technique is effective in reducing the surface trap density [6]. The new AlGaN/GaN HEMT prevents collapses and the inverse gate leakage is lower than that of a conventional PE-CVD.…”

Section: Introductionmentioning

confidence: 98%

A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation

Kamo

Kunii

Takeuchi

et al. 2005

IEEE MTT-S International Microwave Symposium Digest, 2005.

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We applied a Cat-CVD (catalytic chemical vapor deposition) passivation film to AlGaN/GaN HEMTs, to resolve the trade-off between their drain current transient time and gatedrain break down voltage. We did not employ any field plate because it degrades high frequency operation over C-band. The SiN passivation film, deposited after a NH 3 treatment, resulted in less transient time and less gate leakage current than conventional PE-CVD passivation. A T-shaped gate HEMT fabricated by this technique, with Lg = 0.4 µm and Wg = 50.4 mm, delivered an output power over 140 W (2.79 W/mm), which was a record power at C-band.

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“…NH 3 pre-treatment has been shown by different groups [49]- [51] to effectively improve the device performance and reliability. Other pre-passivation plasma surface treatments that were reported to improve the HEMT pulse behavior include C 2 F 6 , O 2 , Cl 2 [51].…”

Section: The Effect Of Passivation and Surface Treatmentsmentioning

confidence: 99%

Reliability of GaN-Based HEMT devices

Menozzi

2008

2008 Conference on Optoelectronic and Microelectronic Materials and Devices

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This paper reviews the main problems characterizing the past and present of GaN-based HEMT reliability. Some general considerations on the maturity of this technology and published lifetesting extrapolations are followed by a review of physical degradation mechanisms, subdivided between temperature-activated and electrical ones, the latter generally linked with the much-debated "current collapse". The paper ends with some conclusive remarks on what has been achieved and what still lies ahead.

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A high reliability GaN HEMT with SiN passivation by Cat-CVD

Cited by 9 publications

References 6 publications

Effects of Nitride-Based Plasma Pretreatment Prior to SiN_x Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates

Effects of Nitride-Based Plasma Pretreatment Prior to SiN_x Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates

A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation

Reliability of GaN-Based HEMT devices

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A high reliability GaN HEMT with SiN passivation by Cat-CVD

Cited by 9 publications

References 6 publications

Effects of Nitride-Based Plasma Pretreatment Prior to SiNx Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates

Effects of Nitride-Based Plasma Pretreatment Prior to SiNx Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates

A C-Band AlGaN/GaN HEMT with Cat-CVD SiN Passivation Developed for an Over 100 W Operation

Reliability of GaN-Based HEMT devices

Contact Info

Product

Resources

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Effects of Nitride-Based Plasma Pretreatment Prior to SiN_x Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates

Effects of Nitride-Based Plasma Pretreatment Prior to SiN_x Passivation in AlGaN/GaN High-Electron-Mobility Transistors on Silicon Substrates