Surface Passivation of In_0.52Al_0.48As Using (NH₄)₂S_xand P₂S₅/(NH₄)₂S

Abstract

State$, wr Be Commisslo n, nor any per son tc Ung on behalf of the Com m.108 1 on: A. Makes any warranty or repres entatton, expres Bed or impU ed, Mth res peet to the accuracy , comple tene 03, or use fulnen of the information contained li thi s report, or that the uae of any /nformation , apparatua, method, or Procesa disclosed In thint rpry,rt mni, "04 1.06 6 u prly*ty owned rluh.; .r B. Assumes any Uabilittes with reepect to the use 01, or for damages re/ulting from the m of Hy idormation. applaratum , melhod, or procm dleclosed M this reporL As used in the above, "perion acting on bebalf of the Commission " includea any employee or contractor of Lhe Commisai on, or uployee of auch contractor, to me extent uit MA ST ER such employee or cor.tractor of the Comm188 ton, or employee of such contracir prepares, dIsseminat es, or provideB accesi to, Any information purBuant to his employmen t or contract with me Commillon , or his employme nt with auch contractor .

Characterization of electrical damage induced by CH4/H2 reactive ion etching of molecular beam epitaxial InAlAs

“…This analytical model is based on the oxide charge effect which depends on the physiochemical properties of the oxide and/or the oxide-semiconductor interface and on the surface state density related to the existence of defects near the interface. Many authors 13,14 have discussed the nature of the oxide present at the InAlAs surface after reactive ion etching, and they found significant concentrations of metal oxides such as InO x and AlO x using Auger electron spectroscopy and x-ray photoelectron spectroscopy. They found that group V elements also form oxides like As 2 O 3 and As 2 O 5 .…”

Sulfur passivation of GaAs metal-semiconductor field-effect transistor

“…15 Thus, the increase of breakdown voltage upon the (NH 4 ͒ 2 S treatment is likely due to ͑a͒ reduce the number of surface recombination centers and hence the surface leakage current and ͑b͒ reduce the number of surface bound charges and hence the corresponding capacitance. The presence of these recombination centers will result in high surface recombination rates and a large number of bound surface charges.…”

Dry sequential process of photochemical etching and surface passivation of In0.52Al0.48As using HBr and H2S

“…Yoshida et al 21 have applied these solutions for the passivation of InAlAs surface. Yoshida et al 21 have applied these solutions for the passivation of InAlAs surface.…”