Characterization of electrical damage induced by CH4/H2 reactive ion etching of molecular beam epitaxial InAlAs

Achouche, M.

doi:10.1116/1.588768

Cited by 6 publications

(1 citation statement)

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“…Achouche et al 17 observed the effectiveness of thermal annealing to reduce the temperature shifts in DLTS peaks. Figure 6 displays the effect of reverse-bias field on the peak maximum temperature T m for the two deep-trap states in our sample.…”

Section: Evidence Of Ndt and Bdt States In In X Ga 1àx Asmentioning

confidence: 99%

Near-surface deep-trap and bulk deep-trap states in InxGa1−xAs/GaAs

Halder

Genareau

2002

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inEffects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN J. Appl. Phys. 97, 073702 (2005); 10.1063/1.1871334 Photoluminescence and deep levels in lattice-matched InGaAsN ∕ GaAsField-effect studies have been performed to investigate the near-surface deep-trap and bulk deep-trap states in molecular-beam epitaxy-grown In x Ga 1Ϫx As ͑where xϭ0.1) on n ϩ GaAs. We have measured the isothermal capacitance transients for the major trap levels in the range of 77-380 K in the reverse-bias field of Ϫ1 to Ϫ3.8 V/cm. The results of our investigation indicate a distinct effect on the deep level spectra due to the applied field, suggesting a definitive way to identify the near-surface deep traps from the bulk deep traps, and vice versa. The two major deep traps identified in the present investigation further display a transition from one state to another, from near-surface to bulk state in the high-field region, when the applied reverse-bias field is increased from Ϫ3.0 to Ϫ3.8 V/cm. ''Field'' means ''normalized'' field, F(norm)ϭF(appl)ϫ10 Ϫ5 .

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Section: Evidence Of Ndt and Bdt States In In X Ga 1àx Asmentioning

confidence: 99%