Plasma Processing of III-V Materials

Youtsey, C.; Adesida, I.

doi:10.1007/978-3-642-56989-0_11

Cited by 7 publications

(8 citation statements)

References 137 publications

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“…High-aspect-ratio trench etches were reported in gallium arsenide (GaAs) using an ICP RIE etcher and Cl 2 process gas [ 112 ]. To avoid roughness on the sidewalls as well as the formation of etch grass on the bottom of the trenches, the etch must be performed at very low pressures, typically approximately 0.2 Pa.…”

Section: Deep High-aspect-ratio Rie Of Compound Semiconductorsmentioning

confidence: 99%

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Huff

2021

Micromachines

126

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This paper reviews the recent advances in reaction-ion etching (RIE) for application in high-aspect-ratio microfabrication. High-aspect-ratio etching of materials used in micro- and nanofabrication has become a very important enabling technology particularly for bulk micromachining applications, but increasingly also for mainstream integrated circuit technology such as three-dimensional multi-functional systems integration. The characteristics of traditional RIE allow for high levels of anisotropy compared to competing technologies, which is important in microsystems device fabrication for a number of reasons, primarily because it allows the resultant device dimensions to be more accurately and precisely controlled. This directly leads to a reduction in development costs as well as improved production yields. Nevertheless, traditional RIE was limited to moderate etch depths (e.g., a few microns). More recent developments in newer RIE methods and equipment have enabled considerably deeper etches and higher aspect ratios compared to traditional RIE methods and have revolutionized bulk micromachining technologies. The most widely known of these technologies is called the inductively-coupled plasma (ICP) deep reactive ion etching (DRIE) and this has become a mainstay for development and production of silicon-based micro- and nano-machined devices. This paper will review deep high-aspect-ratio reactive ion etching technologies for silicon, fused silica (quartz), glass, silicon carbide, compound semiconductors and piezoelectric materials.

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Section: Deep High-aspect-ratio Rie Of Compound Semiconductorsmentioning

confidence: 99%

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Huff

2021

Micromachines

126

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“…12 The first, a CH 4 /H 2 chemistry, is done at room temperature and can produce smooth etched morphologies, but with the drawbacks of a relatively slow etch rate ͑Շ60 nm/min͒ and heavy polymer deposition during the process. Cl 2 -based plasmas have also been used, but the low volatility of InCl x products at room temperature necessitates some form of heating during the etch.…”

Section: B Inaspõingaasp Membrane Etch and Undercutmentioning

confidence: 99%

“…This has been done in the past, using a highdensity ICP-produced Cl 2 plasma, by Fujiwara et al,13 where the production of smooth etched surfaces is most likely due to a combination of the plasma providing local surface heating of the sample and an increased efficiency in the sputter desorption of the InCl x products. 12 Alternately, a number of studies have used a heated wafer table ͑տ150°C͒ with an Ar-Cl 2 chemistry to achieve a volatility of the InCl x products sufficient to etch InP-related compounds with vertical sidewalls and smooth surface morphologies. In a recent study, 14 Rommel and his collaborators optimize this etch ͑us-ing H 2 to control the sidewall profile͒ in an ICP/RIE system to produce submicron-width racetrack resonators with a Q of 8000.…”

Section: B Inaspõingaasp Membrane Etch and Undercutmentioning

confidence: 99%

Fabrication of high-quality-factor photonic crystal microcavities in InAsP/InGaAsP membranes

Srinivasan

Barclay

Painter

et al. 2004

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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. 83, 1915 ͑2003͔͒ resonant mode linewidths of 0.10 nm ͑corresponding to a quality factor ϳ1.3ϫ10 4 ) were measured in a photonic crystal defect microcavity fabricated in an InAsP/ InGaAsP multi-quantum-well membrane. The quality of device fabrication is of critical importance in the performance of these devices. Here, we present the results of key processing steps, including inductively coupled plasma reactive ion etching of a SiO 2 mask and the InAsP/InGaAsP membrane, and a selective undercut wet etch of an underlying sacrificial InP layer to create the freestanding membrane. The importance of etching through the membrane layer deeply into the sacrificial InP layer is highlighted, and discussed in the context of the crystallographic nature of the undercut wet etch process. The results of device processing are compared with previous work done using a chemically assisted ion-beam etch, and a discussion of the benefits of the current approach is given.

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“…Dry etching of In-containing III-V semiconductor materials is typically accomplished using one of two gas chemistries [7].…”

Section: Semiconductor Etchingmentioning

confidence: 99%

“…The Cl 2 -based plasma etch that we employ here does not make use of direct wafer table heating, but rather uses the highdensity plasma produced by the ICP system to provide local surface heating of the sample and an increased efficiency in the sputter desorption of the InCl x products [7]. Such an etch has been used by Fujiwara et al [10] to etch 8 µm diameter, 3.6 µm deep holes in a photonic band-gap structure.…”

Section: Semiconductor Etchingmentioning

confidence: 99%

Fabrication technologies for quantum cascade photonic-crystal microlasers

et al. 2004

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In this paper we describe the technological and fabrication methods necessary to incorporate both photonic and electronic-band engineering in order to create novel surface-emitting quantum cascade microcavity laser sources. This technology offers the promise of several innovative applications such as the miniaturization of QC lasers, and multi-wavelength two-dimensional laser arrays for spectroscopy, gas-sensing and imaging. This approach is not limited to light-emitting devices, and may be efficiently applied to the development of mid-and far-infrared normal-incidence detectors.

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Plasma Processing of III-V Materials

Cited by 7 publications

References 137 publications

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Recent Advances in Reactive Ion Etching and Applications of High-Aspect-Ratio Microfabrication

Fabrication of high-quality-factor photonic crystal microcavities in InAsP/InGaAsP membranes

Fabrication technologies for quantum cascade photonic-crystal microlasers

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