ICP-induced defects in GaN characterized by capacitance analysis

Lan, Wen How; Huang, Kuo Chin; Huang, Kai-Feng

doi:10.1016/j.sse.2006.10.005

Cited by 8 publications

(11 citation statements)

References 29 publications

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“…Further, the Si samples are treated by inductively coupled plasma reactive ion etching (ICP‐RIE), which can significantly increase the density of surface states of the semiconductors by doping or introducing defects on the surface. [ 32,33 ] It is revealed that the current density in the sliding experiments increases with increasing of the density of surface states of the Si samples, which is consistent with the proposed mechanism of the tribovoltaic effect. The effect of sliding load on the tribo‐current is also discussed.…”

Section: Figuresupporting

confidence: 77%

“…The density of surface states of the contact pair is one of the most important factors affecting the amount of the tribo‐excited electrons. Here, the ICP‐RIE treatment is performed to increase the density of surface states of the Si wafer, [ 32,33 ] and the effect of density of surface states on the tribo‐current is discussed. Figure a shows a schematic diagram of ICP‐RIE treatment, in which SF 6 , O 2 , and Ar are the reaction gases.…”

Section: Figurementioning

confidence: 99%

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Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors

et al. 2020

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can be generated by the contact or sliding of a P-type semiconductor against an N-type semiconductor [7][8][9] (or semiconductor against metal [10][11][12] ), and a novel electric generator was proposed. [7] This new type of electric generator is gaining attention for that a direct current can be generated without a rectifier module. [8][9][10][11] However, the mechanism of the current generation in the CE involving semiconductors is still under debate.For the contact between a P-type semiconductor and an N-type semiconductor, the PN junction will be formed at the interface. [13,14] It is highly suspected that the built-in electric field in the PN junction makes the CE between the semiconductors different from that between conventional materials. Considering that, Wang et al. pointed out that the generation of the continuous direct current induced by the sliding of P-type semiconductor against N-type semiconductor is similar to the photovoltaic effect, and can be referred to as the "tribovoltaic effect." [15] The only difference is that the electron-hole pairs in tribovoltaic effect are excited during friction, in which the energy is released due to either the transition of electrons from the surface states of one side to that of another side in the contact or sliding, [16][17][18][19][20][21] or the energy released while forming a new bond at the interface, [22] just as it occurs in the CE between two conventional materials. [23][24][25][26] Then, the electron-hole pairs are separated by the built-in electric field and the external current flowing from the P-side to the N-side will be induced, as it occurs in the photovoltaic effect. [27][28][29] According to the tribovoltaic effect, the excitation efficiency of electron-hole pairs highly depends on the density of surface states of the semiconductors and the bonding interactions. Hence, the tribovoltaic current may be related to the density of surface states of the semiconductors and the sliding load, which can significantly affect the bonding interactions at the sliding interface. [22] In this work, the direct current is generated by sliding an N-type semiconductor tip over a Si sample surface using conductive atomic force microscopy (CAFM). [30,31] Both P-type and N-type Si samples with various doping concentrations are used in the experiments. Further, the Si samples are treated by inductively coupled plasma reactive ion etching (ICP-RIE), which can significantly increase the density of surface states of the semiconductors by doping or introducing defects on the surface. [32,33] It is revealed that the current density in the sliding experiments increases with increasing of the density of surface Contact electrification (CE or triboelectrification) is a common phenomenon, which can occur for almost all types of materials. In previous studies, the CE between insulators and metals has been widely discussed, while CE involving semiconductors is only recently. Here, a tribo-current is generated by sliding an N-type diamond coated tip on a P-type or N-type Si wafer...

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Section: Figuresupporting

confidence: 77%

Section: Figurementioning

confidence: 99%

Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors

et al. 2020

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“…This result is coherent with ranges reported by the literature. [12] Indeed, authors reported time constant variation in AlGaN/GaN HEMT from nanosecond to second, [9] 1 µs to 100 ms. [10] Calculated C it and R it ( Fig. 1(b)) allowed calculation of equivalent capacitance and conductance.…”

Section: Resultsmentioning

confidence: 99%

“…This phenomenon was reported in such structures by many authors. [6,12,21] It is generally attributed to surface states or to deep levels. [10] Derivation of trap characteristics from experimental data requires a theoretical understanding of the trapping process.…”

Section: Methodsmentioning

confidence: 99%

“…[1,3,4] Considerable efforts to improve performance are made to achieve devices operating at high power and high temperature. [2,9,12,14] However, problems due to dispersion effects and instabilities remain a challenge for these applications. [9,10,13] Dispersion is attributed to presence of traps in the heterostructure, in particular, at the interface which causes deterioration of d.c. and rf characteristics.…”

Section: Introductionmentioning

confidence: 99%

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Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance

Semra

Telia

Soltani³

2010

Surface & Interface Analysis

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An analysis of frequency dispersion in capacitance and conductance of gate-source contact of AlGaN/GaN HEMT was performed. Capacitance and conductance were measured at temperatures varying from 83 K to 370 K with bias voltage maintained at 0 V. In order to characterize trap states the conductance method was used considering series resistance. Hence, the parallel conductance G p and capacitance C p were calculated, and consequently interface trap density D it and time constant t are deduced. The analysis is performed assuming a continuum of levels yielding to a trap density of approximately 10 +12 cm −2 eV −1 and a time constant varying between 1 µs and 3 ms. Activation energies and capture cross sections of three trap levels were deduced and their values were respectively ( E a1 = 0.201 eV, σ n1 = 4.992 × 10 −18 cm 2 ), ( E a2 = 0.053 eV, σ n2 = 2.585 × 10 −21 cm 2 ), ( E a3 = 0.121 eV, σ n3 = 1.256 × 10 −20 cm 2 ). An electrical model was established with two levels of traps at AlGaN/GaN interface and one level located in barrier AlGaN surface.

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