Near-surface deep-trap and bulk deep-trap states in InxGa1−xAs/GaAs

Abstract

Articles you may be interested inEffects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN J. Appl. Phys. 97, 073702 (2005); 10.1063/1.1871334 Photoluminescence and deep levels in lattice-matched InGaAsN ∕ GaAsField-effect studies have been performed to investigate the near-surface deep-trap and bulk deep-trap states in molecular-beam epitaxy-grown In x Ga 1Ϫx As ͑where xϭ0.1) on n ϩ GaAs. We have measured the isothermal capacitance transients for the major trap levels in the range of 77-380 K in the reverse-bias field of Ϫ1 to Ϫ3.8 V/cm. The results of our investigation indicate a distinct effect on the deep level spectra due to the applied field, suggesting a definitive way to identify the near-surface deep traps from the bulk deep traps, and vice versa. The two major deep traps identified in the present investigation further display a transition from one state to another, from near-surface to bulk state in the high-field region, when the applied reverse-bias field is increased from Ϫ3.0 to Ϫ3.8 V/cm. ''Field'' means ''normalized'' field, F(norm)ϭF(appl)ϫ10 Ϫ5 .

Deep Trap Concentrations from Three-Dimensional Carrier Concentration Profiles in Hydride Vapor Pressure Epitaxially-Grown GaN

“…The carrier concentration in the depletion region, in the presence of deep traps, is a complex function of doping concentration, trap concentrations, junction depth, sample temperature and the applied reverse bias voltage [17,18]. In order to facilitate a better understanding of the carrier concentration distribution, at different sample temperatures, three-dimensional plots of the carrier From semiconductor theory, we can write, for a reverse bias voltage V r and barrier height V b,…”