Nanoantennas are key optical components for light harvesting; photodiodes convert light into a current of electrons for photodetection. We show that these two distinct, independent functions can be combined into the same structure. Photons coupled into a metallic nanoantenna excite resonant plasmons, which decay into energetic, "hot" electrons injected over a potential barrier at the nanoantenna-semiconductor interface, resulting in a photocurrent. This dual-function structure is a highly compact, wavelength-resonant, and polarization-specific light detector, with a spectral response extending to energies well below the semiconductor band edge.

Recent developments in photovoltaic materials have led to continual improvements in their efficiency. We review the electrical characteristics of 16 widely studied geometries of photovoltaic materials with efficiencies of 10 to 29%. Comparison of these characteristics to the fundamental limits based on the Shockley-Queisser detailed-balance model provides a basis for identifying the key limiting factors, related to efficient light management and charge carrier collection, for these materials. Prospects for practical application and large-area fabrication are discussed for each material.

Unlike silver and gold, aluminum has material properties that enable strong plasmon resonances spanning much of the visible region of the spectrum and into the ultraviolet. This extended response, combined with its natural abundance, low cost, and amenability to manufacturing processes, makes aluminum a highly promising material for commercial applications. Fabricating Al-based nanostructures whose optical properties correspond with theoretical predictions, however, can be a challenge. In this work, the Al plasmon resonance is observed to be remarkably sensitive to the presence of oxide within the metal. For Al nanodisks, we observe that the energy of the plasmon resonance is determined by, and serves as an optical reporter of, the percentage of oxide present within the Al. This understanding paves the way toward the use of aluminum as a low-cost plasmonic material with properties and potential applications similar to those of the coinage metals.

In gratings, incident light can couple strongly to plasmons propagating through periodically spaced slits in a metal film, resulting in a strong, resonant absorption whose frequency is determined by the nanostructure periodicity. When a grating is patterned on a silicon substrate, the absorption response can be combined with plasmon-induced hot electron photocurrent generation. This yields a photodetector with a strongly resonant, narrowband photocurrent response in the infrared, limited at low frequencies by the Schottky barrier, not the bandgap of silicon. Here we report a grating-based hot electron device with significantly larger photocurrent responsivity than previously reported antenna-based geometries. The grating geometry also enables more than three times narrower spectral response than observed for nanoantenna-based devices. This approach opens up the possibility of plasmonic sensors with direct electrical readout, such as an on-chip surface plasmon resonance detector driven at a single wavelength.

Studying the plasmonic properties of metallic nanoparticles at the individual nanostructure level is critical to our understanding of nanoscale metallic systems. Here we show how the presence of a nearby dielectric substrate modifies the energies of the plasmon modes of a metallic nanoparticle. The adjacent dielectric lifts the degeneracy of the dipole plasmon modes oriented parallel and perpendicular to the substrate, introducing a significant energy splitting that depends strongly on the permittivity of the substrate. This energy splitting can easily be misinterpreted as an anomalously broadened plasmon line shape for excitation of an individual nanoparticle with unpolarized light.

The use of aluminum for plasmonic nanostructures opens up new possibilities, such as access to short-wavelength regions of the spectrum, complementary metal-oxide-semiconductor (CMOS) compatibility, and the possibility of low-cost, sustainable, mass-producible plasmonic materials. Here we examine the properties of individual Al nanorod antennas with cathodoluminescence (CL). This approach allows us to image the local density of optical states (LDOS) of Al nanorod antennas with a spatial resolution less than 20 nm and to identify the radiative modes of these nanostructures across the visible and into the UV spectral range. The results, which agree well with finite difference time domain (FDTD) simulations, lay the groundwork for precise Al plasmonic nanostructure design for a variety of applications.

Plasmon-resonant nanoparticle complexes show highly promising potential for light-triggered, remote-controlled delivery of oligonucleotides on demand, for research and therapeutic purposes. Here we investigate the light-triggered release of DNA from two types of nanoparticle substrates: Au nanoshells and Au nanorods. Both light-triggered and thermally induced release are distinctly observable from nanoshell-based complexes, with light-triggered release occurring at an ambient solution temperature well below the DNA melting temperature. Surprisingly, no analogous measureable release was observable from nanorod-based complexes below the DNA melting temperature. These results suggest that a nonthermal mechanism may play a role in plasmon resonant, light-triggered DNA release.

When plasmonic nanostructures serve as the metallic counterpart of a metal-semiconductor Schottky interface, hot electrons due to plasmon decay are emitted across the Schottky barrier, generating measurable photocurrents in the semiconductor. When the plasmonic nanostructure is atop the semiconductor, only a small percentage of hot electrons are excited with a wavevector permitting transport across the Schottky barrier. Here we show that embedding plasmonic structures into the semiconductor substantially increases hot electron emission. Responsivities increase by 25× over planar diodes for embedding depths as small as 5 nm. The vertical Schottky barriers created by this geometry make the plasmon-induced hot electron process the dominant contributor to photocurrent in plasmonic nanostructure-diode-based devices.