In this paper a new packaging technique based on Selective Laser Melting is presented which tries to replace solder or sinter layers, respectively bond wires. Following the intended contact geometry and concept, simulations show the influence of the contact geometry on the thermo-mechanical stress the device is committed to. First investigations on the constraints of the production process are represented. Finally the feasibility of the proposed packaging technique is shown.
In modern power semiconductor devices, the top side of the semiconductor is usually connected by bond wires. Thus top side cooling becomes impossible. This work presents the implementation and the thermal performance of a micro heat sink that allows effective fluid cooling of power semiconductors on both sides of the chip. The micro heat sink is printed directly onto the metalization of the silicon die using the Selective Laser Melting process. Hence, the amount of material transitions within the thermal path is drastically reduced. Finally, the impact of the production method on the silicon die is investigated
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