Innovative and Reliable Power Modules: A Future Trend and Evolution of Technologies

Online Junction Temperature Estimation of SiC Power <sc>mosfets</sc> Through On-State Voltage Mapping

“…Although the thermistor is in direct contact with the die, it is not able to capture the intimate junction temperature due to the non-negligible thermal impedance between the surface of the die and the thermistor itself. This result is consistent with the literature [1]. …”

“…Despite the efforts of the scientific community and power module manufacturers, the measurement of the junction temperature of power semiconductor devices is still a challenge. Over the years the problem has become more important due to the further increased power density of the new devices such as Silicon Carbide (SiC) power MOSFETs [1], [2] and [3].…”

Experimental Investigation on the Transient Switching Behavior of SiC MOSFETs Using a Stage-Wise Gate Driver

“…13, that during the 3 Equivalents a single-stage turn-on event using R gate = 10 Ω. 4 Equivalents a single-stage turn-on event using R gate = 0.5 Ω. A quantitative comparison of the stress and the switching energy for the turn-on event is plotted in Fig.…”

“…This leads to a higher integration level of the converters [4], [5]. A high integration level creates the need for good thermal power flow by using e.g., thermal interface materials [6].…”

A thermal modeling methodology for power semiconductor modules

“…Today a strong trend in power electronics for vehicle applications is to shrink and integrate the power electronic components in order to save space, weight and costs [1,2]. As a consequence of downsizing and integration, space-efficient thermal designs of the power semiconductor modules and thus tighter reliability margins become a critical issue [3].…”