Online Junction Temperature Estimation of SiC Power &lt;sc&gt;mosfets&lt;/sc&gt; Through On-State Voltage Mapping

Stella, Fausto; Pellegrino, Gianmario; Armando, Eric; Daprà, D.

doi:10.1109/tia.2018.2812710

Cited by 88 publications

(24 citation statements)

References 17 publications

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“…This TSEP is particularly relevant as it has been proposed in different publications like [12,38]. Its applicability to SiC MOSFETs will have to be evaluated carefully given the BTI challenges mentioned in the previous section.…”

Section: Rds-on ~ Rch + Rjfet + Rdriftmentioning

confidence: 99%

Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs

Gonzalez

Alatise

2021

IEEE Trans. on Ind. Applicat.

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Section: Rds-on ~ Rch + Rjfet + Rdriftmentioning

confidence: 99%

Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs

Gonzalez

Alatise

2021

IEEE Trans. on Ind. Applicat.

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“…Then, at every time interrupt, the voltage U T,meas at analog input was sampled and fed to the temperature calculation routine, which started with a search for two corresponding indexes (9) using a binary search method. Finally, the temperature was calculated using (11).…”

Section: Look-up Tablementioning

confidence: 99%

“…Temperature measurements are also used-often in conjunction with voltage and current measurements-to monitor key components of the device in order to increase the operational safety and reliability of the device in general. A preventive monitoring based on voltage and current measurement to calculate the temperature of a power switch is reported in [10,11], whereas a direct temperature measurement was studied in [12] to prevent power switch failure and efficiency degradation. As for the temperature measurement, there are mainly four types of sensors used in power electronics: thermocouples [13], resistance temperature detectors (RTD) such as the temperature probe PT100 as reported in [14], thermistors [15] and dedicated integrated circuits (IC) [16].…”

Section: Introductionmentioning

confidence: 99%

Algorithm Execution Time and Accuracy of NTC Thermistor-Based Temperature Measurements in Time-Critical Applications

2021

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This paper addresses the challenges of selecting a suitable method for negative temperature coefficient (NTC) thermistor-based temperature measurement in electronic devices. Although measurement accuracy is of great importance, the temperature calculation time represents an even greater challenge since it is inherently constrained by the control algorithm executed in the microcontroller (MCU). Firstly, a simple signal conditioning circuit with the NTC thermistor is introduced, resulting in a temperature-dependent voltage UT being connected to the MCU’s analog input. Next, a simulation-based approximation of the actual temperature vs. voltage curve is derived, resulting in four temperature notations: for a look-up table principle, polynomial approximation, B equation and Steinhart–Hart equation. Within the simulation results, the expected temperature error of individual methods is calculated, whereas in the experimental part, performed on a DC/DC converter prototype, required prework and available MCU resources are evaluated. In terms of expected accuracy, the look-up table and the Steinhart–Hart equation offer superior results over the polynomial approximation and B equation, especially in the nominal temperature range of the NTC thermistor. However, in terms of required prework, the look-up table is inferior compared to the Steinhart–Hart equation, despite the latter having far more complex mathematical functions, affecting the overall MCU algorithm execution time significantly.

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“…Condition Monitoring (CM) is a passive technique for assessing the switch degradation level and the health of the power module [2,10,11]. CM techniques based on physics of failure (PoF) and electrical operational parameters are studied in the literature [2,[12][13][14]. For wire bond (WB)-related failure modes, ON-state Drain-Source voltage [15] and body diode forward voltage [2] were used as the health indicators.…”

Section: Introductionmentioning

confidence: 99%

“…This limitation becomes more apparent in high frequency circuit designs considering the nominal higher switching frequency in WBG devices. This is mainly due to the fact that the measurement system based on the electrical parameters with galvanic connections are prone to EMI and highfrequency switching transients [13,14,17].…”

Section: Introductionmentioning

confidence: 99%

High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules

2021

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Current distribution anomaly can be used to indicate the onset of package-related failures modes in Silicon Carbide power MOSFET modules. In this paper, we propose to obtain the wire bond’s magnetic field profile using an array of Tunnel Magneto-Resistance (TMR) sensors, and characterise the small changes in the current density distribution to find the onset of the wire bond degradation processes, including wire bond lift-off, wire bond cracking, and wire bond fracture. We propose a novel condition monitoring technique where a non-galvanic high-bandwidth sensing and a reliability model monitor the health of the power switches. We designed a dedicated calibration set-up to examine the sensor array and calibrated to demonstrate the adequate sensitivity to a minimum 5% current anomaly detection in a single wire bond of the switching devices operating with 50 kHz switching frequency. We use a hardware-in-the-loop (HIL) experimental set-up to replicate wire bond-related failures in a 1200V/55A SiC MOSFET power module of a DC/DC Boost converter. Signal conditioning circuits are further designed to amplify and buffer the sensor readings. Experimental results showed the proposed technique is able to detect a wide range of package-related failures.

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Online Junction Temperature Estimation of SiC Power <sc>mosfets</sc> Through On-State Voltage Mapping

Cited by 88 publications

References 17 publications

Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs

Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs

Algorithm Execution Time and Accuracy of NTC Thermistor-Based Temperature Measurements in Time-Critical Applications

High-Frequency Non-Invasive Magnetic Field-Based Condition Monitoring of SiC Power MOSFET Modules

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