A thermal modeling methodology for power semiconductor modules

Broeck, Christoph H. van der; Conrad, Marcus; Doncker, Rik W. De

doi:10.1016/j.microrel.2015.06.102

Cited by 28 publications

(4 citation statements)

References 17 publications

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“…The observation C D(#) of v(t) can be carried out by a LFO which is described by the state space equation (Eq. 6) [3].…”

Section: Design Of a Single Lfomentioning

confidence: 99%

“…Some research deals with the thermal model of power module to estimate the temperature of semiconductor chips. In order to obtain an accurate thermal model of power modules, heat transfers are considered and a spatial discretized thermal model can then be introduced [2,3]. Note that the heat equation is a partial differential equation (PDE) with continuous distribution of parameters leading to infinite order systems.…”

Section: Introductionmentioning

confidence: 99%

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Soft sensor design for estimation of thermal behavior of encapsulating materials in power electronic module

Trajin

Sakhraoui

Rotella

2021

Microelectronics Reliability

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“…The observation C D(#) of v(t) can be carried out by a LFO which is described by the state space equation (Eq. 6) [3].…”

Section: Design Of a Single Lfomentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Soft sensor design for estimation of thermal behavior of encapsulating materials in power electronic module

Trajin

Sakhraoui

Rotella

2021

Microelectronics Reliability

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“…However, due to the preferred small design margins usually challenged in high-temperature applications and the missing thermal considerations [8]- [11], the failure rate is expected to increase without adequate active countermeasures [4]. The active solutions are gaining increased attention, particularly in multi-level and multi-phase converters, due to their inherent capability to dynamically redistribute the power flow, i.e., the thermal stress among subunits.…”

Section: Introductionmentioning

confidence: 99%

Enhancing Power Module Lifespan Through Power Distribution Approaches in a Three-Phase Interleaved DC/DC Converter

Tavčar,

Bordignon,

Muñoz-Aguilar

et al. 2023

IEEE Access

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This paper comprehensively analyzes various power distribution approaches to balance the stress on power modules (PM) in a three-phase interleaved DC/DC converter and increase its lifespan. Two implementations of power distribution are investigated: a symmetrical approach, where the PM utilizations are balanced by controlling the duration of their active intervals, and an asymmetrical approach, achieved by adjusting their reference currents. Regardless of the power distribution method, the estimation of accumulated PM stress is evaluated using two utilization metrics: energy-related and current-related. Different utilization and distribution control algorithms are validated using a hardware-in-the-loop (HiL) simulation setup, considering varying load profiles. The additional control modules require only minor modifications to the conventional two-loop controller structure, exhibit consistent responses, and steadily reduce the balance mismatch for all control combinations. The results demonstrate that asymmetrical control combined with energy utilization estimation yields the most favorable balance mismatch rate. Moreover, this methodology demonstrates superior energy efficiency in intervals characterized by balance mismatch, though it necessitates a significant initial labor investment for constructing the thermal mode.INDEX TERMS Interleaved converter, SiC mosfet, power distribution, switch utilization, thermal model, load balancing, control algorithm, enhanced lifespan, hardware-in-the-loop.

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“…Wide-bandgap semiconductor materials (SiC, GaN,...) are able to operate at higher temperature ranges than traditional silicon chips. Thus, their use allows to increase power densities within the power modules with more integrated structures and functions [1][2][3][4][5]. However, their introduction in power electronic leads to an increase in thermo-mechanical stresses on the various components of the modules packaging (solder, substrate, encapsulant...).…”

Section: Introductionmentioning

confidence: 99%

Bond graph multi-physics modeling of encapsulating materials in power electronic modules

Trajin

Vidal

2020

Eur. Phys. J. Appl. Phys.

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This paper focuses on multi-physics modeling of encapsulating gels in power electronic modules for transient and steady-state simulation. With the emergence of wide-bandgap semiconductors such as SiC or GaN, operating at a higher temperature than conventional Si power chips, this passive element of the packaging appears as a few studied element sensitive to thermal and mechanical stresses. A thermo-mechanical coupled modeling of the material, based on bond graph representation, is presented. This approach allows to establish, under the same formalism, an analogy between the different physical domains. From this analogy, a multi-physical nonlinear state space representation is built, allowing transient simulation of the thermo-mechanical behavior of the material. This way of modeling and simulating is particularly adapted for a preliminary study during the upstream phases of design of the power electronic modules. It quickly establishes the maximum temperature and mechanical strains experienced by the gel.

show abstract

A thermal modeling methodology for power semiconductor modules

Cited by 28 publications

References 17 publications

Soft sensor design for estimation of thermal behavior of encapsulating materials in power electronic module

Soft sensor design for estimation of thermal behavior of encapsulating materials in power electronic module

Enhancing Power Module Lifespan Through Power Distribution Approaches in a Three-Phase Interleaved DC/DC Converter

Bond graph multi-physics modeling of encapsulating materials in power electronic modules

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