Spatial Electro-Thermal Modeling and Simulation of Power Electronic Modules

Broeck, Christoph H. van der; Ruppert, Lukas A.; Hinz, Arne; Conrad, Marcus; Doncker, Rik W. De

doi:10.1109/tia.2017.2757898

Cited by 62 publications

(12 citation statements)

References 18 publications

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“…The computational time and complexity of parameterizing and/or solving equivalent networks increases by taking into account heat spreading, anisotropy, and temperature dependence of material properties. The three-dimensional (3-D) equivalent thermal networks consisting of resistors R and capacitors C developed to model primarily the nominal operation of power devices, as, e.g., [30]- [32], neglect the temperature dependence of material parameters. On the other hand, the 3-D thermal networks that can take into account the temperaturedependent material thermal properties, e.g., [33], [34], imply a higher computational cost due to the need to update the system matrix in each simulation step, which is less attractive for the multiphysics modeling in PE.…”

Section: B Et Modeling Of 4h-sic Power Devicesmentioning

confidence: 99%

Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Tsibizov

Kovacevic-Badstuebner

Kakarla

et al. 2020

IEEE Trans. Power Electron.

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Electrothermal modeling of silicon carbide (SiC) power devices is frequently performed to estimate the device temperature in operation, typically assuming a constant thermal conductivity and/or heat capacity of the SiC material. Whether and by how much the accuracy of the resulting device temperature prediction under these assumptions is compromised has not been investigated so far. Focusing on high-temperature operating conditions as found under short circuit (SC), this paper presents a comprehensive analysis of thermal material properties determining the temperature distribution inside SiC power MOSFETs. Using a calibrated technology computer-aided design (TCAD) electrothermal model, it is demonstrated that the temperature prediction of SiC power devices under SC operation when neglecting either the top metallization or the temperature dependence of the heat capacity is inaccurate by as high as 25%. The presented analysis enables to optimize compact electrothermal models in terms of accuracy and computational time, which can be used to assess the maximum temperature of SiC power MOSFETs in both discrete packages and multichip power modules exposed to fast thermal transients. A onedimensional thermal network of a SiC power MOSFET is proposed based on the thermal material properties, the size of the active area of the device, and its thickness. Index Terms-Electrothermal (ET) modeling, short circuit (SC), silicon carbide (SiC), TCAD, thermal conductivity. I. INTRODUCTIONW ITH the ever-increasing requirements for energy saving, the adoption of silicon carbide (SiC) power transistors has been following a growing trend across different power electronic (PE) applications, including electrical vehicles (EVs), EV charging infrastructure, power factor correction, power supply, photovoltaics, uninterruptible power supplies, motor drives, wind, and rail [1]. Increasing the acceptance of the emerging SiC technology in the field of high-frequency, high-temperature, and/or high-power applications needs to be supported by a comprehensive understanding of SiC material properties and their influence on the system performance. Nowadays, multiphysics modeling tools based on the underlying physics of the SiC material are widely employed both in academia and industry to

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Section: B Et Modeling Of 4h-sic Power Devicesmentioning

confidence: 99%

Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Tsibizov

Kovacevic-Badstuebner

Kakarla

et al. 2020

IEEE Trans. Power Electron.

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“…The comparison considers the maximum MPE in the efficiency estimation and the capability of a standard driving cycle simulation. [43] 3-phase IBC Yes 0.49% [57] Synchronous buck No 3.84% [58] 3-phase converter Yes 4% [59] Synchronous buck No 3% [60] 3…”

Section: Efficiency Validation With the Prototypementioning

confidence: 99%

Scalable Modeling Approach and Robust Hardware-in-the-Loop Testing of an Optimized Interleaved Bidirectional HV DC/DC Converter for Electric Vehicle Drivetrains

et al. 2020

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Automotive Original Equipment Manufacturers (OEMs) require varying levels of functionalities and model details at different phases of the electric vehicles (EV) development process, with a trade-off between accuracy and execution time. This article proposes a scalable modelling approach depending on the multi-objective targets between model functionalities, accuracy and execution time. In this article, four different fidelity levels of modelling approaches are described based on the model functionalities, accuracy and execution time. The highest error observed between the low fidelity (LoFi) map-based model and the high fidelity (HiFi) physics-based model is 5.04%; while, the simulation time of the LoFi model is ~10 4 times faster than corresponding one of the HiFi model. A detailed comparison of all characteristics between multi-fidelity models is demonstrated in this paper. Furthermore, a dSPACE SCALEXIO Hardwarein-the-Loop (HiL) testbench, equipped with a minimal latency of 18μsec, is used for real-time (RT) model implementation of the EV's HV DC/DC converter. The performance of the entire HiL setup is compared with the Model-in-the-Loop (MiL) setup and the highest RMSE is limited to 0.54 among the HiL and MiL results. Moreover, the accuracy (95.7%) of the passive component loss estimation is verified through the Finite Element Method (FEM) software model. Finally, the experimental results of a full-scale 30-kW SiC DC/DC converter prototype are presented to validate the accuracy and correlation between multi-fidelity models. It has been observed that the efficiency deviation between the hardware prototype and multi-fidelity models is less than 1.25% at full load. Furthermore, the SiC Interleaved Bidirectional Converter (IBC) prototype achieves a high efficiency of 98.4% at rated load condition. INDEX TERMS DC/DC interleaved converter, EV, efficiency, electro-thermal modelling, multi-fidelity models, optimization, scalable modelling, Hardware-in-the-loop, and wide-bandgap technology.

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“…In these methods, first time courses of the power emitted in the device are computed by means of a programme for analysis of electronic circuits. Based on these waveforms, a 2D or 3D thermal analysis is performed in a programme solving the heat conduction equation [17].…”

Section: Introductionmentioning

confidence: 99%

Methods of Fast Analysis of DC–DC Converters—A Review

Górecki

2021

Electronics

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The paper discusses the methods of fast analysis of DC–DC converters dedicated to computer programmes. Literature methods of such an analysis are presented, which enable determination of the characteristics of the considered converters in the steady state and in the transient states. The simplifications adopted at the stage of developing these methods are discussed, and their influence on the accuracy of computations is indicated. Particular attention is paid to the methods of fast analysis of DC–DC converters, taking into account thermal phenomena in semiconductor devices. The sample results of computations of the DC–DC boost type converter obtained with the use of the selected methods are presented. The scope of application of particular computation methods and their duration times are discussed. Computations were performed with the use of SPICE and PLECS.

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Spatial Electro-Thermal Modeling and Simulation of Power Electronic Modules

Cited by 62 publications

References 18 publications

Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Accurate Temperature Estimation of SiC Power mosfets Under Extreme Operating Conditions

Scalable Modeling Approach and Robust Hardware-in-the-Loop Testing of an Optimized Interleaved Bidirectional HV DC/DC Converter for Electric Vehicle Drivetrains

Methods of Fast Analysis of DC–DC Converters—A Review

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