produces some real risks, including wrinkles, pigmented flat spots known as liver spots, and even skin cancer. [1][2][3][4] These are mostly attributed to the effects of UV light, a shorter wavelength than the visual spectrum. Therefore, over the past decades, developments in UV sensors have received significant attention for their potential positive effects on human health.When considering the performance of many different UV sensors, required features include high sensitivity, stability, and linearity. Most importantly, a compact design compatible with current device fabrication process is key for low-cost production. [5,6] Previous studies mostly focused on a two terminal photodiode device based on wide bandgap (WBG) semiconductor materials such as TiO 2 , SiC, and ZnO materials. [7][8][9] Later, some III-V compounds, such as gallium nitride (GaN), also received attention as UV photodetector materials. [10,11] Some metal-semiconductor-metal (MSM) structures have also been proposed to simplify device fabrication processes. [7][8][9][10][11][12] Although such WBG-based UV sensors have the advantages of a simple structure and high intrinsic visible-blindness; numinous drawbacks such as poor crystal quality or high activation energy of dopants have slowed developments. In addition, UV-sensing devices have received significant recent attention for applications in areas such as human health, fire detection, and optical communication.One key factor for product commercialization is determining the optimal materials that allow for integration of excellent UV-sensing properties with compatibility with industrial fabrication processes. However, current UV sensors often fail to achieve this due to either mismatched materials or a device that must be excessively large in order to produce enough photocurrent for UV detection. The UV-light-sensing properties of an amorphous InGaZnO 4 (IGZO) thin-film transistor with a dual-gate structure and relatively small device size (width/length = 50 μm/10 μm) that achieves high sensitivity through a threshold-voltage-(V th )-adjustment method is proposed. Comparing the drain currents under UV exposure to those under darkened conditions indicates that the ratio between the photoinduced and dark current reaches 10 6 . Furthermore, the UV sensitivity of the dual-gate transistors can be adjusted by varying the bottom gate voltage, with each pixel of the sensor then being read out separately via scan line pulses. This allows the dual-gate a-IGZO transistor to be used for high-performance UV sensing while being effectively integrated in display applications.
SensorsAlmost all living things on Earth rely on the sun for nutrition and survival, whether directly or indirectly. The sun provides radiant heat, and gives energy to plants for the photosynthesis process, thus providing basic needs and food for creatures and humans. However, exposure to the sun for human beings also
