Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

Wu, Po Kuei; Huang, Hui‐Chun; Ma, Xiaohua; Tsai, Tsung‐Ming; Sze, Simon M.; Zheng, Haimei; Shih, Chih‐Cheng; Chang, Ting‐Chang; Chen, Wei-Jang; Yang, Ching‐Chieh; Chen, Wen-Chung; Tai, Mao‐Chou; Tan, Yung‐Fang

doi:10.1109/led.2020.2968629

Cited by 20 publications

(6 citation statements)

References 25 publications

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“…This ammonium‐doped device achieves low breakdown voltage during the forming process and low power consumption during the SET/RESET process. [ 119 ] As shown in Figure 4c, the ON and OFF current are reduced by ≈50% and 80%, respectively.…”

Section: Rs Device and Performance Improvementmentioning

confidence: 96%

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

et al. 2021

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As human society enters the big data era, huge data storage and energy‐efficient data processing are in great demand. The resistive switching device is an emerging device with both inherent memory and computation capabilities. It may bring disruptive influences to modern information technology from bottom up. After decades of study of the materials, mechanisms, and devices, the maturity of the resistive switching device in various applications, for example, nonvolatile memory, artificial neural networks, and information security, could be foreseen. Herein, the recent progress of the resistive switching device from the aspects of materials, devices, and applications is reviewed. First, the resistive switching device, including mechanisms and materials, is briefly discussed. Performance improvement methods with respect to individual device properties are systematically illustrated. Second, characterization technologies for understanding the mechanism and guidance of device design are classified and discussed in depth. Third, various applications based on resistive switching devices are summarized. The review ends with a brief conclusion concerning the challenges from mechanism to algorithm level and the future outlook.

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Section: Rs Device and Performance Improvementmentioning

confidence: 96%

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

et al. 2021

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“…In this review, we will present RRAM-related inorganic materials with oxides, solid electrolyte and two-dimensional (2D) materials. [9,20,75], NiO [8,12,76], TiO 2 [21,77,78], HfO 2 [60,79,80], ZnO [81][82][83], and ZrO 2 [22,84,85] are always playing main roles in materials application of RS medium. The first report of RS performance in binary metal oxides was proposed by Hickmott in 1962 [91], which demonstrated the RS characteristics of Al/Al 2 O 3 /Al device under the effect of an electric field.…”

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

“…As one of the most typical representatives of oxides, binary oxides have been explored for over half a century due to their simple composition, low manufacture cost, compatibility with traditional CMOS (complementary metal-oxide-semiconductor transistor) technology, and ease of fabrication and control. Among binary oxides, binary metal oxides such as Al 2 O 3 [ 9 , 20 , 75 ], NiO [ 8 , 12 , 76 ], TiO 2 [ 21 , 77 , 78 ], HfO 2 [ 60 , 79 , 80 ], ZnO [ 81 , 82 , 83 ], and ZrO 2 [ 22 , 84 , 85 ] are always playing main roles in materials application of RS medium.…”

Section: Thin Film Materials Of Rram Devicesmentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

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“…Therefore, the RRAM must exhibit a certain level of thermal stability to ensure compatibility with the CMOS process. However, most studies on RRAM-based memristors have focused on improving the electrical characteristics of the device, whereas only a few studies pertaining to thermal degradation have investigated the effect of postdeposition annealing processes prior to TE deposition. − As the operation of RRAM is primarily determined by the conducting filament (CF) of oxygen vacancies formed in the active layer, RRAM is susceptible to structural defects caused by the heat applied during annealing . In addition, the number of artificial synapses used in the implementation of neuromorphic systems is at least 10 4 and is expected to be significantly affected by thermal degradation.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Thermal Degradation Effect on a HfO₂-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System

Park

Kim

et al. 2021

ACS Appl. Electron. Mater.

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The thermal budget problem needs to be considered for a neuromorphic system based on a memristor to be compatible with silicon-based devices. The thermal degradation caused by postmetal annealing (PMA) was investigated for HfO 2based memristor (HM) devices at temperatures above 300 °C to ensure the thermal stability of memristor devices and analyze the effect of thermal degradation on the neuromorphic system. As thermal degradation is caused by oxygen atom movement between the interlayer and the top electrode (TE), the thermal stability of the memristor can be improved by adjusting the oxygen affinity of the TE metal. By changing the TE metal from titanium (Ti) to tantalum (Ta), the resistance of the high-resistance state and resistance variability after PMA at 400 °C for 1 h decreased from 516 to 10% and from 21 to 4%, respectively. In addition, pattern recognition simulation was performed using an artificial neural network consisting of a memristor device. Although the pattern recognition simulation with the Ti TE-HM showed a pattern recognition accuracy of 82.3% after PMA owing to thermal degradation, the simulation with the Ta TE-HM showed a high accuracy of 51.7% even after PMA. This experimental approach can facilitate the development of neuromorphic systems with good thermal stability up to 400 °C.

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Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

Cited by 20 publications

References 25 publications

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Analysis of the Thermal Degradation Effect on a HfO₂-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System

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Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation Annealing

Cited by 20 publications

References 25 publications

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

A Review of Resistive Switching Devices: Performance Improvement, Characterization, and Applications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Analysis of the Thermal Degradation Effect on a HfO2-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System

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Analysis of the Thermal Degradation Effect on a HfO₂-Based Memristor Synapse Caused by Oxygen Affinity of a Top Electrode Metal and on a Neuromorphic System