Flexible low-temperature polycrystalline silicon thin-film transistors

Chang, Ting Chang; Tsao, Yao-Chung; Chen, P.-H.; Tai, Mao‐Chou; Huang, Shin-Ping; Su, Wan-Ching; Chen, G.-F.

doi:10.1016/j.mtadv.2019.100040

Cited by 65 publications

(35 citation statements)

References 114 publications

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“…Polycrystalline silicon thin-film transistors (poly-Si TFTs) offer higher carrier (electron and hole) mobility (100 cm 2 V –1 s –1 ) 16 compared to a-Si and IGZO; poly-Si also has better response times and excellent stability. These properties enabled TFT dimensions to be reduced to allow a higher aperture ratio in devices resulting in increased brightness and reduced power consumption.…”

Section: Introductionmentioning

confidence: 99%

“…The challenge of scaling ELA systems for large substrate sizes is also a concern for large-screen displays such as in generation 6 or higher. 16 High processing costs, pulse to pulse instability associated with gas lasers, and other spatial beam inhomogeneities in the crystallized region due to multipass laser scanning over large areas can present challenges in the application of ELA for TFT manufacture. Optoelectronic issues include high leakage currents and performance instabilities due to small fluctuations in current or voltage applied to the TFT devices, which can degrade the uniform brightness of OLED pixels.…”

Section: Introductionmentioning

confidence: 99%

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Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

Farid

Brunton

Rumsby

et al. 2021

ACS Appl. Mater. Interfaces

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A new process to crystallize amorphous silicon without melting and the generation of excessive heating of nearby components is presented. We propose the addition of a molybdenum layer to improve the quality of the laser-induced crystallization over that achieved by direct irradiation of silicon alone. The advantages are that it allows the control of crystallite size by varying the applied fluence of a near-infrared femtosecond laser. It offers two fluence regimes for nanocrystallization and polycrystallization with small and large crystallite sizes, respectively. The high repetition rate of the compact femtosecond laser source enables high-quality crystallization over large areas. In this proposed method, a multilayer structure is irradiated with a single femtosecond laser pulse. The multilayer structure includes a substrate, a target amorphous Si layer coated with an additional molybdenum thin film. The Si layer is crystallized by irradiating the Mo layer at different fluence regimes. The transfer of energy from the irradiated Mo layer to the Si film causes the crystallization of amorphous Si at low temperatures (∼700 K). Numerical simulations were carried out to estimate the electron and lattice temperatures for different fluence regimes using a two-temperature model. The roles of direct phonon transport and inelastic electron scattering at the Mo–Si interface were considered in the transfer of energy from the Mo to the Si film. The simulations confirm the experimental evidence that amorphous Si was crystallized in an all-solid-state process at temperatures lower than the melting point of Si, which is consistent with the results from transmission electron microscopy (TEM) and Raman. The formation of crystallized Si with controlled crystallite size after laser treatment can lead to longer mean free paths for carriers and increased electrical conductivity.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

Farid

Brunton

Rumsby

et al. 2021

ACS Appl. Mater. Interfaces

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show abstract

“…Low-Temperature Poly-Silicon (LTPS) is a promising candidate for high frame rates and high-resolution flexible displays due to the high mobility and stable characteristics compared to a-Si:H [28]. Nevertheless, the higher temperature of Poly-Si crystallization compared with the glass transition temperature of plastic limits LTPS realization [29].…”

Section: Introductionmentioning

confidence: 99%

A Review of the Progress of Thin-Film Transistors and Their Technologies for Flexible Electronics

Hosseini

Nawrocki

2021

Micromachines

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Flexible electronics enable various technologies to be integrated into daily life and fuel the quests to develop revolutionary applications, such as artificial skins, intelligent textiles, e-skin patches, and on-skin displays. Mechanical characteristics, including the total thickness and the bending radius, are of paramount importance for physically flexible electronics. However, the limitation regarding semiconductor fabrication challenges the mechanical flexibility of thin-film electronics. Thin-Film Transistors (TFTs) are a key component in thin-film electronics that restrict the flexibility of thin-film systems. Here, we provide a brief overview of the trends of the last three decades in the physical flexibility of various semiconducting technologies, including amorphous-silicon, polycrystalline silicon, oxides, carbon nanotubes, and organics. The study demonstrates the trends of the mechanical properties, including the total thickness and the bending radius, and provides a vision for the future of flexible TFTs.

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“…The development of flexible or wearable devices is another major factor driving the need for developing cost-effective layer transfer and chip transfer techniques [ 124 , 129 , 136 , 137 , 138 , 139 , 140 , 141 , 142 , 143 , 144 ]. Flexible electronics can find a wide range of applications, such as flexible or stretchable displays [ 137 , 145 , 146 , 147 , 148 , 149 , 150 , 151 , 152 , 153 ], flexible transistors [ 154 , 155 , 156 , 157 , 158 , 159 , 160 ], flexible solar cells [ 77 , 92 , 161 ], flexible sensors [ 162 , 163 , 164 , 165 , 166 ], wearable medical devices [ 127 , 167 , 168 , 169 ], and human–machine interfaces [ 170 , 171 , 172 , 173 , 174 ]. While organic semiconductors are naturally suited for fabricating flexible devices because of their solution processable and conformal coating compatibility with the flexible substrate,...…”

Section: Introductionmentioning

confidence: 99%

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

Gong

2021

Nanomaterials

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Hetero-integration of functional semiconductor layers and devices has received strong research interest from both academia and industry. While conventional techniques such as pick-and-place and wafer bonding can partially address this challenge, a variety of new layer transfer and chip-scale transfer technologies have been developed. In this review, we summarize such transfer techniques for heterogeneous integration of ultrathin semiconductor layers or chips to a receiving substrate for many applications, such as microdisplays and flexible electronics. We showed that a wide range of materials, devices, and systems with expanded functionalities and improved performance can be demonstrated by using these technologies. Finally, we give a detailed analysis of the advantages and disadvantages of these techniques, and discuss the future research directions of layer transfer and chip transfer techniques.

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Flexible low-temperature polycrystalline silicon thin-film transistors

Cited by 65 publications

References 114 publications

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

A Review of the Progress of Thin-Film Transistors and Their Technologies for Flexible Electronics

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review

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