We have systematically investigated the impact of device size scaling on the light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes (LEDs). Devices with diameters in the range 20–300 μm have been studied. It is shown that smaller LED pixels can deliver higher power densities (despite the lower absolute output powers) and sustain higher current densities. Investigations of the electroluminescence characteristics of differently sized pixels against current density reveal that the spectral shift is dominated by blueshift at the low current density level and then by redshift at the high current density level, owing to the competition between the bandgap shrinkage caused by self-heating and band-filling effects. The redshift of the emission wavelength with increasing current density is much faster and larger for the bigger pixels, suggesting that the self-heating effect is also size dependent. This is further confirmed by the junction-temperature rise measured by the established spectral shift method. It is shown that the junction-temperature rise in smaller pixels is slower, which in turn explains why the smaller redshift of the emission wavelength with current density is present in smaller pixels. The measured size-dependent junction temperature is in reasonable agreement with finite element method simulation results.
The mechanisms of size-dependent efficiency and efficiency droop of blue InGaN micro-pixel light emitting diodes (LEDs) have been investigated experimentally and by simulation. Electrical characterisation confirms the improvement of current spreading for smaller LEDs, which enables the achievement of the higher efficiency at high injection current densities. Owing to the higher ratio of sidewall perimeter to mesa area of smaller LEDs, a lower efficiency was observed at a low injection current density, resulting from defect-related Shockley-Read-Hall non-radiative recombination. We demonstrate that such sidewall etch defects can be partially recovered by increased thermal annealing time, consequently improving the efficiency at low current densitie
Studying neuronal processes such as synaptic summation, dendritic physiology and neural network dynamics requires complex spatiotemporal control over neuronal activities. The recent development of neural photosensitization tools, such as channelrhodopsin-2 (ChR2), offers new opportunities for non-invasive, flexible and cell-specific neuronal stimulation. Previously, complex spatiotemporal control of photosensitized neurons has been limited by the lack of appropriate optical devices which can provide 2D stimulation with sufficient irradiance. Here we present a simple and powerful solution that is based on an array of high-power micro light-emitting diodes (micro-LEDs) that can generate arbitrary optical excitation patterns on a neuronal sample with micrometre and millisecond resolution. We first describe the design and fabrication of the system and characterize its capabilities. We then demonstrate its capacity to elicit precise electrophysiological responses in cultured and slice neurons expressing ChR2.
a-plane GaN templates and coalesced epitaxial lateral overgrown (ELOG) films on r-plane sapphire substrates were investigated by x-ray diffraction (XRD). The a-plane GaN templates were found to have [0001]-oriented stripe-features, which is related to anisotropic mosaicity. For the mosaic blocks, the mosaicity reached the largest and the smallest values along the [11̄00] and the [0001] directions. The ELOG procedure with the SiO2 mask stripes perpendicular to the [0001] direction limits the preferable growth along this direction, and thereby enhances the [11̄00] growth. This leads to large-area, featureless, a-plane GaN films for which the wing tilt and not the fine mosaic block size becomes the major XRD line-broadening mechanism.
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