The mechanisms of size-dependent efficiency and efficiency droop of blue InGaN micro-pixel light emitting diodes (LEDs) have been investigated experimentally and by simulation. Electrical characterisation confirms the improvement of current spreading for smaller LEDs, which enables the achievement of the higher efficiency at high injection current densities. Owing to the higher ratio of sidewall perimeter to mesa area of smaller LEDs, a lower efficiency was observed at a low injection current density, resulting from defect-related Shockley-Read-Hall non-radiative recombination. We demonstrate that such sidewall etch defects can be partially recovered by increased thermal annealing time, consequently improving the efficiency at low current densitie

This work proposes a high-bandwidth white-light system consisting of a blue gallium nitride (GaN) micro-LED (μLED) exciting yellow-emitting CsPbBrI perovskite quantum dots (YQDs) for high-speed real-time visible light communication (VLC). The packaged 80 μm × 80 μm blue-emitting μLED has a modulation bandwidth of ∼160 MHz and a peak emission wavelength of ∼445 nm. The achievable bandwidth of the white-light system is up to 85 MHz in the absence of filters and equalization technology. Meanwhile, the bandwidth of the YQDs as a color converter is as high as 73 MHz with the blue GaN μLED as the pump source. A maximum data rate of 300 Mbps can be achieved by taking advantage of the high bandwidth of the white-light system using the non-return-to-zero on-off keying (NRZ-OOK) modulation scheme. The resultant bit-error rate is 2.0 × 10, well beneath the forward error correction criterion of 3.8 × 10 required for error-free data transmission. In addition, the YQDs which we proposed as a color converter possess high stability for VLC. After half a year, the achievable bandwidths of the white-light system and the YQDs are still up to 83 and 70 MHz, respectively. This study provides the direction of developing high-bandwidth white-light system for both high-efficiency solid-state lighting and high-speed VLC.

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It is demonstrated that treatment of blue‐emissive carbon dots (CDs) with aqueous hydrogen peroxide (H2O2) results in the green emissive solid state CD phosphor with photoluminescence quantum yield of 25% and short luminescence lifetime of 6 ns. The bathochromic‐shifted, enhanced green emission of H2O2‐treated CDs in the powder is ascribed to surface state changes occurring in the aggregated material. Using the green emissive H2O2‐treated CD phosphor, down‐conversion white‐light‐emitting devices with cool, pure, and warm white light are fabricated. Moreover, using the green emissive CD phosphor as a color converter, a laser‐based white‐light source is realized, and visible light communication with a high modulation bandwidth of up to 285 MHz and data transmission rate of ≈435 Mbps is demonstrated.

High-speed underwater optical wireless communication (UOWC) was achieved using an 80 μm blue-emitting GaN-based micro-LED. The micro-LED has a peak emission wavelength of ~440 nm and an underwater power attenuation of 1 dB/m in tap water. The -3 dB electrical-to-optical modulation bandwidth of the packaged micro-LED increases with increasing current and saturates at ~160 MHz. At an underwater distance of 0.6 m, 800 Mb/s data rate was achieved with a bit error rate (BER) of 1.3 × 10^-3, below the forward error correction (FEC) criteria. And we obtained 100 Mb/s data communication speed with a received light output power of -40 dBm and a BER of 1.9 × 10^-3, suggesting that UOWC with extended distance can be achieved. Through reflecting the light emission beam by mirrors within a water tank, we experimentally demonstrated a 200 Mb/s data rate with a BER of 3.0 × 10^-6 at an underwater distance of 5.4 m.

Optical micromanipulation has become popular for a wide range of applications. In this work, a new type of optical micromanipulation platform, patterned optoelectronic tweezers (p‐OET), is introduced. In p‐OET devices, the photoconductive layer (that is continuous in a conventional OET device) is patterned, forming regions in which the electrode layer is locally exposed. It is demonstrated that micropatterns in the photoconductive layer are useful for repelling unwanted particles/cells, and also for keeping selected particles/cells in place after turning off the light source, minimizing light‐induced heating. To clarify the physical mechanism behind these effects, systematic simulations are carried out, which indicate the existence of strong nonuniform electric fields at the boundary of micropatterns. The simulations are consistent with experimental observations, which are explored for a wide variety of geometries and conditions. It is proposed that the new technique may be useful for myriad applications in the rapidly growing area of optical micromanipulation.

Temperature-dependent trends in radiative and Auger recombination coefficients have been determined at different injection carrier concentrations using InGaN micro-light emitting diodes 40 μm in diameter. The differential lifetime was obtained first from the measured modulation bandwidth and was then employed to calculate the carrier concentration in the quantum well active region. When the temperature increases, the carrier concentration increases, but both the radiative and Auger recombination coefficients decrease. In addition, the temperature dependence of radiative and Auger recombination coefficients is weaker at a higher injection carrier concentration, which is strongly related to phase space filling

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