Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

Zhou, Kuan‐Ju; Chen, Po-Hsun; Zheng, Yu‐Zhe; Tai, Mao‐Chou; Wang, Yu-Xuan; Chien, Ya-Ting; Sun, Pei-Jun; Huang, Hui‐Chun; Chang, Ting‐Chang; Sze, Simon M.

doi:10.1039/d2tc01460b

Cited by 8 publications

(6 citation statements)

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“…There are several material compositions for TAOS for active semiconductors using indium (In) and tin (Sn) as carrier enhancers and gallium (Ga), and zinc (Zn) as a stabilizer. Popular oxide semiconductors like InGaO, [18][19][20][21][22][23][24] InSnO, [25][26][27][28] InZnO, [29][30][31][32] ZnSnO, [33][34][35][36] InGaZnO, [1,2,[7][8][9][10] InGaSnO, [37][38][39][40] InZnSnO, [41][42][43] and InGaZnSnO [44][45][46][47] are widely studied. The choice of the materials in the periodic table suggests the atoms with spherically symmetric s-orbitals with a comparatively large ionic radius tends to show high mobility.…”

Section: Introductionmentioning

confidence: 99%

High Performance Amorphous In_0.5Ga_0.5O Thin‐Film Transistor Embedded with Nanocrystalline In₂O₃ Dots for Flexible Display Application

Rabbi

Ali

Park

et al. 2023

Adv Elect Materials

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High‐performance, coplanar amorphous In0.5Ga0.5O (a‐IGO) thin film transistor (TFT) on a polyimide (PI) substrate deposited by spray pyrolysis (SP) is reported. The SP a‐IGO film deposited at 370 °C has less than 8% nanocrystalline‐In2O3 dots and a mass density of 6.6 g cm−3. The a‐IGO TFT on PI exhibits linear mobility over 30 cm2 V−1 s−1 and a negligible shift in threshold voltage (ΔVTH = <0.3 V) under positive bias (+20 V) at 60 °C for 1 h. The TFT performance is stable even when bent to a radius of ≈1 mm. The X‐ray photoelectron spectroscopy results of the SP a‐IGO deposited at 370 °C indicate the O‐vacancy (Vo) related defects of 25.79% and hydroxyl (OH) at less than 3%, indicating a good active/gate insulator interface. A seven‐stage ring oscillator made of SP a‐IGO TFTs exhibits a high oscillation frequency (>2.3 MHz) with a low propagation delay time of ≈30 ns per stage at a supply voltage (VDD) of 15 V. The fabricated gate shift register circuit works up to the last stage without any decrement of the input voltage (15 V) with rising and falling times less than 0.8 µs. Therefore, the coplanar a‐IGO TFT by SP deposited at 370 °C is a promising candidate for low‐cost, flexible TFT backplanes of foldable electronics.

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Section: Introductionmentioning

confidence: 99%

High Performance Amorphous In_0.5Ga_0.5O Thin‐Film Transistor Embedded with Nanocrystalline In₂O₃ Dots for Flexible Display Application

Rabbi

Ali

Park

et al. 2023

Adv Elect Materials

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“…Related literature has reported that the bond energy between zinc and O is weak. These generated oxygen vacancies are represented in the energy band by the generation of deep oxygen vacancies (V O ) and shallow states (V O + , V O 2+ ); such characteristics of the material are utilized to provide more UV sensing applications. , At the Zn-rich IGZO/SiO 2 interface defects occur which induce electron injection into the interface, cause a high dynamic photoresponse, and improve interface electron injection. The drain-side electron increases the barrier height, while the holes induced in the bulk of the Zn-rich layer under illumination cause barrier height lowering.…”

Section: Introductionmentioning

confidence: 99%

Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects

Chen

Kuo

et al. 2023

ACS Appl. Electron. Mater.

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This study presents an ultraviolet (UV) photodetector based on a dual-active-layer amorphous indium−gallium− zinc oxide (a-IGZO) thin-film transistor (TFT), where a Zn-rich IGZO layer is designed as a charge trapping center due to its oxygen vacancies and easy-to-generate interface defects. When a drain bias of 10 V is given, the electron injection occurs closer to the drain end, which causes the active layer to exhibit a significant resistance effect. This phenomenon is clearly observed in the unilateral capacitance−voltage (C−V) measurement. During the irradiation with a UV light source, holes are induced close to the electron injection location in Zn-rich bulk. These holes induced by UV light will cause barrier lowering effects and generate additional photocurrent under UV irradiation. The contrast current under UV light indicates that the on−off ratio between light-induced and dark current reaches 10 6 in dark conditions. In addition, this device has excellent light response and recovery speed in various light pulse environments. The high sensitivity and the high stability of this dual-active-layer UV light sensing TFT are beneficial to comprehensive and versatile applications in the semiconductor panel industry.

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“…Beyond the display backplane, amorphous InGaZnO (IGZO) has drawn significant attention for its applications to photonic devices such as memory, − neuromorphic computing, − and photodetectors. − Oxygen vacancy ( V O ), which is inevitable during the deposition process, is one of the most critical factors in determining the optoelectronic properties of IGZO. Despite the wide optical bandgap ( E opt,g > 3.0 eV), the V O for which the energy level is broadly distributed above the valence band maximum (VBM) facilitates photodetection in the visible range through the photoionization of V O to form V O 2+ and 2e – .…”

Section: Introductionmentioning

confidence: 99%

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

Jang

Lee

2022

ACS Appl. Electron. Mater.

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We present comprehensive studies on ZnON thin films deposited by radio-frequency (RF) magnetron sputtering using a ZnO target under various nitrogen plasma conditions. A ZnON thin film grown under the highest nitrogen partial flow rate exhibits the lowest optical bandgap of 1.84 eV, excellent stability upon air exposure, an amorphous/nanocrystalline structure, and the strongest stoichiometric Zn3N2 chemical states. The highest field-effect mobility of 4.28 cm2 V–1 s–1, the largest responsivity, and the negligible persistent photoconductivity (PPC) effect against visible light are also realized by the thin-film transistor (TFT) configuration. The device performance of the ZnON phototransistor is compared to those of other oxide semiconductors of ZnO and InGaZnO (IGZO). Finally, an IGZO/ZnON phototransistor, where ZnON was deposited on top of IGZO by an in situ process, demonstrates high specific detectivities (1.65 × 1013, 1.35 × 1013, and 2.0 × 1014 Jones against red, green, and blue photons, respectively) without the PPC effect. We examined the photoluminescence (PL) spectra of ZnON with respect to nitrogen-associated defects, which are yet to be discussed, and emphasize that our optimum deposition process is free of the poisoning effect. To our knowledge, this is the first report on a ZnON phototransistor in which the channel was prepared by reactive sputtering of a ZnO target.

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Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

Abstract: In this study, a thin-film transistor with a heterogeneous channel structure was introduced into oxide semiconductors to improve their electrical properties, which resulted in high mobility and lower subthreshold swing...

Cited by 8 publications

References 50 publications

High Performance Amorphous In_0.5Ga_0.5O Thin‐Film Transistor Embedded with Nanocrystalline In₂O₃ Dots for Flexible Display Application

High Performance Amorphous In_0.5Ga_0.5O Thin‐Film Transistor Embedded with Nanocrystalline In₂O₃ Dots for Flexible Display Application

Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

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Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions

Abstract: In this study, a thin-film transistor with a heterogeneous channel structure was introduced into oxide semiconductors to improve their electrical properties, which resulted in high mobility and lower subthreshold swing...

Cited by 8 publications

References 50 publications

High Performance Amorphous In0.5Ga0.5O Thin‐Film Transistor Embedded with Nanocrystalline In2O3 Dots for Flexible Display Application

High Performance Amorphous In0.5Ga0.5O Thin‐Film Transistor Embedded with Nanocrystalline In2O3 Dots for Flexible Display Application

Function of a Dual-Active-Layer Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistor with Ultraviolet-Induced Effects

In Situ IGZO/ZnON Phototransistor Free of Persistent Photoconductivity with Enlarged Spectral Responses

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Product

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High Performance Amorphous In_0.5Ga_0.5O Thin‐Film Transistor Embedded with Nanocrystalline In₂O₃ Dots for Flexible Display Application

High Performance Amorphous In_0.5Ga_0.5O Thin‐Film Transistor Embedded with Nanocrystalline In₂O₃ Dots for Flexible Display Application