area efficiency by mimicking human neurons, synapses, and their networks. [3,4] Memristors are known as promising candidates for artificial synapses, constituting a key building block for neuromorphic computing. Moreover, crossbar array (CBA) made of memristors is promising to construct neural networks due to its fast and highly parallelized computing capability that utilizes multiply-and-accumulate (MAC) operation based on Ohm's law and Kirchhoff 's law. [5,6] However, state-of-the-art memristive CBA using transition metal oxide (TMO) is suffering from challenges such as limited resistive switching (RS) ratio and considerable temporal (cycle-to-cycle) and spatial (device-todevice) variability, [7][8][9] which necessitates alternative material platforms with better switching reliability.Memristors based on 2D materials have emerged as a promising option over TMObased memristors [10,11] due to their unique properties and superior device performance, including large RS ratio, [12] low switching voltage, [12,13] small device variation, [14] as well as, capability of transition between the threshold and bipolar RS. [12,15] However, conventional 2D material-based memristive devices are fabricated using mechanical exfoliation, which lacks a good control of flake thickness and poor spatial variation. [16][17][18][19] Moreover, due to the single crystallinity of the exfoliated flake, post-treatments are required to decorate defects for creating switching pathways, such as, ion and electron beam irradiation, which hinder the implementation of circuits and computing hardware. [15,[20][21][22] To address these inherent limitations caused by mechanical exfoliation, considerable efforts have been dedicated to develop scalable fabrication processes. One such approach is liquid-phase exfoliation and spin-coating, which can produce large quantities of materials, but at the expense of crosspoint area scaling and nanoflake orientation control, resulting in poor endurance and low array density. [23][24][25] Another scalable approach is wafer-scale 2D material synthesis that by far has been primarily driven by logic applications which demand monolayer, high mobility, and single crystallinity. [26,27] Recently, memristors based on chemical vapor deposition (CVD) grown 2D materials with intrinsic defects have been demonstrated with the potential for wafer-scale device fabrication capability with low device Memristor crossbar with programmable conductance could overcome the energy consumption and speed limitations of neural networks when executing core computing tasks in image processing. However, the implementation of crossbar array (CBA) based on ultrathin 2D materials is hindered by challenges associated with large-scale material synthesis and device integration. Here, a memristor CBA is demonstrated using wafer-scale (2-inch) polycrystalline hafnium diselenide (HfSe 2 ) grown by molecular beam epitaxy, and a metal-assisted van der Waals transfer technique. The memristor exhibits small switching voltage (0.6 V), low switching energy...
An electro-photo-sensitive synapse based on a highly reliable InGaZnO thin-film transistor is demonstrated to mimic synaptic functions and pattern-recognition functions.
Coupling charge impurity scattering effects and charge‐carrier modulation by doping can offer intriguing opportunities for atomic‐level control of resistive switching (RS). Nonetheless, such effects have remained unexplored for memristive applications based on 2D materials. Here a facile approach is reported to transform an RS‐inactive rhenium disulfide (ReS2) into an effective switching material through interfacial modulation induced by molybdenum‐irradiation (Mo‐i) doping. Using ReS2 as a model system, this study unveils a unique RS mechanism based on the formation/dissolution of metallic β‐ReO2 filament across the defective ReS2 interface during the set/reset process. Through simple interfacial modulation, ReS2 of various thicknesses are switchable by modulating the Mo‐irradiation period. Besides, the Mo‐irradiated ReS2 (Mo‐ReS2) memristor further exhibits a bipolar non‐volatile switching ratio of nearly two orders of magnitude, programmable multilevel resistance states, and long‐term synaptic plasticity. Additionally, the fabricated device can achieve a high MNIST learning accuracy of 91% under a non‐identical pulse train. The study's findings demonstrate the potential for modulating RS in RS‐inactive 2D materials via the unique doping‐induced charged impurity scattering property.
Amorphous In-Ga-Zn-O thin-film transistors on flexible substrates were prepared to investigate H2O adsorption under negative bias stress (NBS). Shorter channel lengths induce a more seriously deteriorated NBS stability due to the stronger electric field near the source or drain electrode. With increasing channel width, the NBS instability increases to a peak and then slightly decreases. Integrated Systems Engineering Technology Computer-aided Design (ISE-TCAD) simulation confirms that the electric field near the source/drain in the etch-stop layer is relatively dense, especially near the channel edges. The electric field direction is also confirmed to have significant effects on the H2O adsorption process.
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