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The equilibrium hydrogen surface coverage on Si(100) during silicon epitaxy using SiH4 has been measured in a rapid thermal chemical vapor deposition reactor. The hydrogen coverage could be ‘‘frozen out’’ completely on the surface by a rapid cool-down and pump-down of the reactor up to temperatures of ≂575 °C; at temperatures above 575 °C only partial ‘‘freeze-out’’ is achieved. Surface hydrogen was titrated in situ using the reactor as a thermal desorption spectrometer. Epitaxial silicon films were grown in the temperature range 450–700 °C and the film growth kinetics was correlated with the equilibrium hydrogen coverage. The growth mechanism changes from the low-temperature regime, where the surface is hydrogen covered, to the high-temperature regime, where the surface is essentially clean.

In this paper we review paramagnetic point defects in amorphous silicon nitride thin films. We will discuss two intrinsic paramagnetic defects: a trivalent silicon center, named the K‐center, and the recently observed nitrogen dangling‐bond center. We examine the structural identification, and the electronic properties of the K‐center, as well as consider why normala‐SiNx:H is generally a very effective charge trapping dielectric. In addition, this paper compares and contrasts special features of the structure and electronic role of the paramagnetic point defects in both silicon dioxide and silicon nitride thin films; this may provide insight for further studies on the physics and chemistry of these dangling‐bond centers in both materials.

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The surface reactivity of hydrogen-passivated, HF-cleaned Si(100) towards hydrocarbon adsorption is examined by surface analysis; most hydrocarbons adsorb on the surface. Dangling bonds formed during thermal processing react with fragmented organic molecules forming Sic, Metal-oxide-semiconductor devices fabricated on contaminated surfaces are degraded, with the degree of degradation depending on the nature of the contaminant.

In this paper we review and examine paramagnetic point defects in thin film amorphous silicon dioxide false(normala‐SiO2false) , which is an important insulating material in modern electronic devices. Findings unique to thin films are compared with results from bulk materials to yield a picture of the structural, physical, chemical, and electronic nature of the defect centers. The most important defect in normala‐SiO2 is emphasized, the trivalent silicon moiety termed the E′ center. We examine the types of E′ centers observed in radiation or injection damaged thermal oxides, ion sputtered oxides, plasma enhanced chemical vapor deposited oxides, ion implanted thermal oxides, plastically densified silica, fused silicas, and high surface area sol‐gel oxides. The nature of the precursor moieties, and their electrical charging phenomena are discussed. The different varieties of E′ centers are categorized, and the reliability of their distinct existence and classification is assessed.

Epitaxial silicon has been grown on Si(100) wafers using SiH4 in a rapid thermal chemical vapor deposition reactor in the temperature regime from 450–700 °C. Gas analysis during growth and thermal desorption spectra (TDS) after growth were measured with a differentially pumped mass spectrometer. We have attempted to estimate the surface population of hydrogen during epitaxial growth by ‘‘freezing out’’ the surface hydrogen with a rapid cool down and pump down followed by a temperature programmed desorption taken in the reactor. SiH is found as the majority species in equilibrium during growth, with the surface population decreasing from one monolayer around 550–600 °C, at a pressure of three mTorr SiH4. Molecular hydrogen does not interfere with silane adsorption in this pressure regime.

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